PDF 2SA1924 Data sheet ( Hoja de datos )

Número de pieza	2SA1924
Descripción	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications 2SA1924 Unit: mm • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 1.5 10 150 −55 to 150 Electrical Characteristics (Tc = 25°C) Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = 0, f = 1 MHz Min Typ. Max ― ― −400 140 140 ― ― ― ― ― ― ― ― ― −0.4 −0.76 35 18 −10 −1 ― 450 400 −1.0 −0.9 ― ― Unit µA µA V V V MHz pF Turn-on time Switching time Storage time Fall time ton 20 µs A line indIB1 Output ― 0.2 ― l d (Pb tstg IB2 ― 2.3 ― µs VCC = −200 V tf IB1 = −10 mA, IB2 = 20 mA, duty cycle ≤ 1% 1 ― 0.2 ― 2004-07-26 1 page

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