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PDF IRFHM8363PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM8363PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
30
± 20
14.9
20.4
6.7
10i
V
V
mΩ
nC
A
Applications
• Power Stage for high frequency buck converters
• Battery Protection charge and discharge switches
Features and Benefits
IRFHM8363PbF
HEXFET® Power MOSFET
SG
G
S
D
D
D
D
D
D
PQFN Dual 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (< 6.7°C/W)
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM8363TRPBF
IRFHM8363TR2PBF
Package Type
PQFN Dual 3.3mm x 3.3mm
PQFN Dual 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
gPower Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
11
8.6
29hi
18hi
10i
116
2.7
19
0.02
-55 to + 150
Note
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2013 International Rectifier
May 13, 2013
Free Datasheet http://www.datasheet4u.com/
1 page  
IRFHM8363PbF
35
ID = 10A
30
25
20 TJ = 125°C
15
TJ = 25°C
10
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
120
ID
100
TOP
2.3A
4.7A
BOTTOM 10A
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
5 www.irf.com © 2013 International Rectifier
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
May 13, 2013
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFHM8363PBF.PDF ] | |
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