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IRF9389PBF の電気的特性と機能

IRF9389PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9389PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF9389PBF Datasheet, IRF9389PBF PDF,ピン配置, 機能
VDS
RDS(on) max
Qg (typical)
ID
(@TA = 25°C)
N-CH
30
27
6.8
6.8
P-CH
-30
64
8.1
-4.6
V
m
nC
A
IRF9389PbF
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
SO-8
Applications
l High and Low Side Switches for Inverter
l High and Low Side Switches for Generic Half-Bridge
Features
Benefits
High and low-side MOSFETs in a single package
Increased power density
High-side P-Channel MOSFET
Easier drive circuitry
Industry-standard pinout
results in Multi-vendor compatibility
Compatible with existing surface mount techniques
RoHS compliant containing no Lead, no Bromide and no Halogen
Easier manufacturing
Environmentally friendlier
MSL1, Consumer qualification
Increased reliability
Base Part Number Package Type
IRF9389PbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable part number
IRF9389PbF
IRF9389TRPbF
Absolute Maximum Ratings
Parameter
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRJL
eRJA
Junction-to-Drain Lead
Junction-to-Ambient
Max.
N-Channel P-Channel
±20 ±20
6.8 -4.6
5.4 -3.7
34 -23
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max
20
62.5
Units
°C/W
1 www.irf.com © 2012 International Rectifier
January 14, 2013
Free Datasheet http://www.datasheet4u.com/

1 Page





IRF9389PBF pdf, ピン配列
N-Channel
IRF9389PbF
100
10
TOP
BOTTOM
VGS
7.5V
6.5V
5.5V
4.5V
4.0V
3.5V
3.0V
2.75V
1
0.1
2.75V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
100
10
TOP
BOTTOM
VGS
7.5V
6.5V
5.5V
4.5V
4.0V
3.5V
3.0V
2.75V
2.75V
1
0.1
60μs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10 TJ = 150°C
2.0
ID = 5.4A
VGS = 4.5V
1.5
1 TJ = 25°C
0.1
1
VDS = 15V
60μs PULSE WIDTH
23456
VGS, Gate-to-Source Voltage (V)
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
3 www.irf.com © 2012 International Rectifier
Fig 4. Normalized On-Resistance
vs. Temperature
January 14, 2013
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF9389PBF 電子部品, 半導体
N-Channel
IRF9389PbF
2.0
1.8
1.6
1.4
ID = 10μA
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
20000
16000
12000
8000
4000
0
1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2
Time (sec)
Fig 14. Typical Power vs. Time
VGS
QGS
VG
QG
QGD
Charge
Fig 15a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2F
.3F
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15b. Gate Charge Test Circuit
6 www.irf.com © 2012 International Rectifier
January 14, 2013
Free Datasheet http://www.datasheet4u.com/

6 Page



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部品番号部品説明メーカ
IRF9389PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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