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IRF9332PBF の電気的特性と機能

IRF9332PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9332PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF9332PBF Datasheet, IRF9332PBF PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-30 V
17.5 m
28.1 m
14 nC
-9.8 A
PD - 97561
IRF9332PbF
HEXFET® Power MOSFET
6
6
6
*
'
'
'
'
SO-8
Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
results in Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9332PbF
IRF9332TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Notes  through † are on page 2
www.irf.com
Max.
-30
±20
-9.8
-7.8
-80
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet http:/0/9w/w01w/.2d0a1ta0sheet4u.com/

1 Page





IRF9332PBF pdf, ピン配列
IRF9332PbF
100
10
1
TOP
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.5V
100
10
TOP
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.5V
0.1
-2.5V
0.01
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10 100
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
10
TJ = 150°C
1
TJ = 25°C
VDS = -10V
60µs PULSE WIDTH
0.1
123456
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1
-2.5V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID = -9.8A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 KHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
12.0
10.0
8.0
ID= -7.8A
VDS= -24V
VDS= -15V
VDS= -6.0V
6.0
4.0
2.0
100
1
10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
10 20 30 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF9332PBF 電子部品, 半導体
IRF9332PbF
L
VCC
DUT
0
210K
SS
Fig 17a. Gate Charge Test Circuit
VDS
L
RG
--V2G0SV
tp
D.U.T
IAS
0.01
DRIVER
VDD
A
15V
Fig 18a. Unclamped Inductive Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
IAS
tp
V(BR)DSS
Fig 18b. Unclamped Inductive Waveforms
VDS
VGS
RG
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
-
+ VDD
Fig 19a. Switching Time Test Circuit
6
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 19b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.datasheet4u.com/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF9332PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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