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IRF9328PBF の電気的特性と機能

IRF9328PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9328PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF9328PBF Datasheet, IRF9328PBF PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-30
11.9
19.7
18
-12
V
mΩ
mΩ
nC
A
6
6
6
*
PD - 97518
IRF9328PbF
HEXFET® Power MOSFET
'
'
'
'
SO-8
Applications
Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF932 8Pb F
IRF932 8TRPb F
Package Type
SO8
SO8
Standard Pack
For m
Quantity
Tu be/B ulk
95
Tape and Reel
4 000
Absolute Maxim um Ratings
Parameter
V DS
V GS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
P D @TA = 25°C
P D @TA = 70°C
Drain-to-S ource Voltage
Gate-to-Source Voltage
Conti nuous Drain Current, VGS @ 10V
Conti nuous Drain Current, VGS @ 10V
cPul sed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
T ST G
Operating Juncti on and
Storage Temperature Range
Max.
-30
± 20
-12
-9.6
-96
2.5
1.6
0.02
-55 to + 150
Note
Un its
V
A
W
W/°C
°C
Notes  through † are on page 2
www.irf.com
1
Free Datasheet http://ww5w/2.d6a/1ta0sheet4u.com/

1 Page





IRF9328PBF pdf, ピン配列
IRF9328PbF
100 100
10
VGS
TOP
-10V
-5.0V
-4.5V
1
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM -2.5V
0.1
0.01
0.1
-2.5V
60μs PULSE WIDTH
Tj = 25°C
1 10
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
100
10
TJ = 150°C
1
VGS
10
TOP
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
1
-2.5V
BOTTOM -2.5V
0.1
0.1
60μs PULSE WIDTH
Tj = 150°C
1 10
-V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
1.6
ID = -12A
1.4 VGS = -10V
1.2
0.1
0.01
1.0
TJ = 25°C
VDS = -10V
60μs PULSE WIDTH
2.0 3.0 4.0 5.0
-V GS, Gate-to-Source Voltage (V)
6.0
Fig 3. Typical Transfer Characteristics
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14
ID= -9.6A
12 VDS= -24V
VDS= -15V
10 VDS= -6.0V
8
6
4
2
100
1
10 100
-V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0
0 8 16 24 32 40 48
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF9328PBF 電子部品, 半導体
IRF9328PbF
L
VCC
DUT
0
210K
SS
Fig 18a. Gate Charge Test Circuit
VDS
L
RG
--V2G0SV
tp
D.U.T
IAS
0.01Ω
DRIVER
VDD
A
15V
Fig 19a. Unclamped Inductive Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
IAS
tp
V(BR)DSS
Fig 19b. Unclamped Inductive Waveforms
VDS
VGS
RG
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
-
+ VDD
Fig 20a. Switching Time Test Circuit
6
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 20b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.datasheet4u.com/

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共有リンク

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部品番号部品説明メーカ
IRF9328PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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