|
|
IRF9310PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRF9310PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF9310PBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
VDS
RDS(on) max
(@VGS = 10V)
ID
(@TA = 25°C)
-30 V
4.6 mΩ
-20 A
6
6
6
*
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
PD - 97437A
IRF9310PbF
HEXFET® Power MOSFET
'
'
'
'
SO-8
Features and Benefits
Features
Low RDSon (≤ 4.6mΩ)
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
results in
⇒
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9310PbF
IRF9310TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through
are on page 2
www.irf.com
Max.
-30
± 20
-20
-16
-160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet http0:/3//w1w9/w2.0d1a0tasheet4u.com/
1 Page 1000
100
≤60µs PULSE WIDTH
Tj = 25°C
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
IRF9310PbF
1000
≤60µs PULSE WIDTH
Tj = 150°C
100
TOP
BOTTOM
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
1
0.1
-2.3V
0.01
0.1 1 10
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1000
100
10
1
0.1
-2.3V
1 10
100
-V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID = -20A
VGS = -10V
1.4
1.2
TJ = 150°C
10 TJ = 25°C
1.0
1
VDS = -10V
≤60µs PULSE WIDTH
2345
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
12.0
10.0
8.0
ID= -16A
VDS= -24V
VDS= -15V
6.0
4.0
2.0
100
1
10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
25 50 75 100 125 150
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/
3Pages IRF9310PbF
L
VCC
DUT
0
210K
SS
Fig 18a. Gate Charge Test Circuit
VDS
L
RG
--V2G0SV
tp
D.U.T
IAS
0.01Ω
DRIVER
VDD
A
15V
Fig 19a. Unclamped Inductive Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
IAS
tp
V(BR)DSS
Fig 19b. Unclamped Inductive Waveforms
VDS
VGS
RG
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
-
+ VDD
Fig 20a. Switching Time Test Circuit
6
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 20b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.datasheet4u.com/
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ IRF9310PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF9310PBF | HEXFET Power MOSFET | International Rectifier |
IRF9310PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |