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IRF9310PBF の電気的特性と機能

IRF9310PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9310PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF9310PBF Datasheet, IRF9310PBF PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = 10V)
ID
(@TA = 25°C)
-30 V
4.6 m
-20 A
6
6
6
*
Applications
Charge and Discharge Switch for Notebook PC Battery Application
PD - 97437A
IRF9310PbF
HEXFET® Power MOSFET
'
'
'
'
SO-8
Features and Benefits
Features
Low RDSon (4.6mΩ)
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
results in
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9310PbF
IRF9310TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through … are on page 2
www.irf.com
Max.
-30
± 20
-20
-16
-160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet http0:/3//w1w9/w2.0d1a0tasheet4u.com/

1 Page





IRF9310PBF pdf, ピン配列
1000
100
60µs PULSE WIDTH
Tj = 25°C
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
IRF9310PbF
1000
60µs PULSE WIDTH
Tj = 150°C
100
TOP
BOTTOM
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
1
0.1
-2.3V
0.01
0.1 1 10
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1000
100
10
1
0.1
-2.3V
1 10
100
-V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID = -20A
VGS = -10V
1.4
1.2
TJ = 150°C
10 TJ = 25°C
1.0
1
VDS = -10V
60µs PULSE WIDTH
2345
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
12.0
10.0
8.0
ID= -16A
VDS= -24V
VDS= -15V
6.0
4.0
2.0
100
1
10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
25 50 75 100 125 150
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.datasheet4u.com/


3Pages


IRF9310PBF 電子部品, 半導体
IRF9310PbF
L
VCC
DUT
0
210K
SS
Fig 18a. Gate Charge Test Circuit
VDS
L
RG
--V2G0SV
tp
D.U.T
IAS
0.01
DRIVER
VDD
A
15V
Fig 19a. Unclamped Inductive Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
IAS
tp
V(BR)DSS
Fig 19b. Unclamped Inductive Waveforms
VDS
VGS
RG
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
-
+ VDD
Fig 20a. Switching Time Test Circuit
6
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 20b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.datasheet4u.com/

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共有リンク

Link :


部品番号部品説明メーカ
IRF9310PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF9310PBF-1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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