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PDF IXGF36N300 Data sheet ( Hoja de datos )
| Número de pieza | IXGF36N300 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
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High Voltage IGBT
For Capacitor Discharge
Applications
IXGF36N300
VCES =
IC25
VCE(sat)
=
≤
3000V
36A
2.7V
( Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
VCES
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, VGE = 20V, 1ms
VGE= 20V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 minute
Maximum Ratings
3000
V
± 20 V
± 30 V
36 A
18 A
400 A
ICM = 300
VCE ≤ 0.8 • VCES
160
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
20..120/4.5..27
Nm/lb-in.
4000
V~
5g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE
=
0.8
•
VCES,
VGE
=
0V
Note
2
,TJ
=
125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IICC
=
=
3160A0A, VGE
=
15V,
Note
1
Characteristic Values
Min. Typ.
Max.
3000
V
3.0 5.0 V
50 μA
2 mA
±200 nA
2.7 V
5.2 V
12
5
Isolated Tab
1 = Gate
2 = Emitter
5 = Collector
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Applications
Capacitor Discharge
Pulser Circuits
Advantages
High Power Density
Easy to Mount
© 2009 IXYS CORPORATION, All Rights Reserved
DS99979C(11/09)
Free Datasheet http://www.datasheet4u.com/
1 page  
IXGF36N300
Fig. 12. Resistive Turn-on
Rise Time vs. Junction Temperature
450
400 RG = 2Ω , VGE = 15V
VCE = 1500V
350
300
250 I C = 72A
200
I C = 36A
150
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10,000
Fig. 14. Resistive Turn-on
Switching Times vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGE = 15V
VCE = 1500V
I C = 72A
I C = 36A
1,000
1,000
100
100
1
2400
2000
1600
10 100
RG - Ohms
Fig. 16. Resistive Turn-off
Switching Times vs. Drain Current
t f td(off) - - - -
RG = 2Ω, VGE = 15V
VCE = 1500V
10
1000
290
270
250
1200
TJ = 125ºC
230
800
TJ = 25ºC
400
210
190
0 170
15 20 25 30 35 40 45 50 55 60 65 70 75
IC - Amperes
Fig. 13. Resistive Turn-on
Rise Time vs. Drain Current
450
400
350
RG = 2Ω , VGE = 15V
300 VCE = 1500V
250
TJ = 125ºC
200
150 TJ = 25ºC
100
15 20 25 30 35 40 45 50 55 60 65 70 75
IC - Amperes
Fig. 15. Resistive Turn-off
Switching Times vs. Junction Temperature
1600
1400
1200
t f td(off) - - - -
RG = 2Ω, VGE = 15V
VCE = 1500V
1000
800
I C = 36A
240
230
220
210
200
600 190
400
200 I C = 72A
180
170
0 160
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10,000
Fig. 17. Resistive Turn-off
Switching Times vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 1500V
I C = 36A
1,000
10,000
1,000
I C = 72A
100
1
10 100
RG - Ohms
100
1000
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_36N300(8P)11-23-09-D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGF36N300.PDF ] | |
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