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09N70PのメーカーはAdvanced Power Electronicsです、この部品の機能は「AP09N70P」です。 |
部品番号 | 09N70P |
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部品説明 | AP09N70P | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューと09N70Pダウンロード(pdfファイル)リンクがあります。 Total 6 pages
AP09N70P/R
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
GG
D
D
S
S
BVDSS
RDS(ON)
ID
Description
AP09N70 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 G
type provide high blocking voltage to overcome voltage surge and sag in the D
toughest power system with the best combination of fast switching,ruggedized S
design and cost-effectiveness.
600/675V
0.75Ω
9A
TO-220(P)
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
VDS Drain-Source Voltage
VGS Gate-Source Voltage
- /A 600/675
± 30
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
9
5
40
156
1.25
305
9
9
-55 to 150
-55 to 150
TO-262(R)
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.8
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200218032
Free Datasheet http://www.datasheet4u.com/
1 Page AP09N70P/R
10
T C =25 o C
8
6
V G =10V
V G =6.0V
V G =5.0V
4
V G =4.5V
2
V G =4.0V
V G =3.5V
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T C =150 o C
8
6
V G =10V
V G =6.0V
V G =5.0V
V G =4.5V
4
V G =4.0V
2
V G =3.5V
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
2.8
I D =4.5A
2.4 V G =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
3Pages AP09N70P/R
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5x RATED VDS
+
10 V
-
S
VGS
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VDS
D
TO THE
OSCILLOSCOPE
0.8 x RATED VDS
G
S VGS
+
1~ 3 mA
-
II
GD
VG
10V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 09N70P データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
09N70P | AP09N70P | Advanced Power Electronics |