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PDF IXFH4N100Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH4N100Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
IXFH 4N100Q
IXFT 4N100Q
VDSS
ID25
RDS(on)
= 1000 V
= 4A
= 3.0 W
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
1000
1000
±20
±30
4
16
4
20
700
5
V
V
V
V
A
A
A
mJ
mJ
V/ns
150
-55 to +150
150
-55 to +150
300
1.13/10
6
4
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
1000
VDS = VGS, ID = 1.5 mA
3.0
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
V =0V
GS
TJ = 25°C
T
J
= 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
5.0
±100
50
1
3.0
V
V
nA
mA
mA
W
TO-247 AD (IXFH)
G
DS
TO-268 (D3) ( IXFT)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL94V-0
flammabilityclassification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98648A (03/24/00)
1-4
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH4N100Q.PDF ] | |
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