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IRHLF87Y20 の電気的特性と機能

IRHLF87Y20のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED LOGIC LEVEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHLF87Y20
部品説明 RADIATION HARDENED LOGIC LEVEL POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHLF87Y20 Datasheet, IRHLF87Y20 PDF,ピン配置, 機能
PD-97810
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHLF87Y20 100K Rads (Si)
IRHLF83Y20 300K Rads (Si)
RDS(on)
32m
32m
ID
12A*
12A*
IRHLF87Y20
20V, N-CHANNEL
R 8 ™ TECHNOLOGY
International Rectifier’s R8TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
TO-39
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
12*
10.2 A
48
15.6 W
0.13
W/°C
±12 V
43 mJ
12 A
1.6 mJ
2.85
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
08/13/13
Free Datasheet http://www.datasheet4u.com/

1 Page





IRHLF87Y20 pdf, ピン配列
PRraed-iIarrtaiodniaCtihoanracteristics
IRHLF87Y20
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Diode Forward Voltage „
1. Part numbers IRHLF87Y20, IRHLF83Y20
Up to 300K Rads(Si)1
Min Max
20 —
1.0 2.3
— 100
— -100
— 1.0
— 32
— 1.2
Units
V
nA
µA
m
V
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 12V
VGS = -12V
VDS= 16V, VGS= 0V
VGS = 4.5V, ID = 10.2A
VGS = 0V, ID = 12A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
37 ± 5%
60 ± 5%
81 ± 5%
298 ± 5%
320 ± 5%
375 ± 7.5%
(µm)
38 ± 5%
32 ± 7.5%
28 ± 7.5%
@VGS=
0V
18
18
18
@VGS=
-1V
18
18
18
@VGS=
-2V
15
@VGS=
-3V
12
12
@VGS=
-5V
8
8
6
@VGS=
-10V
4
-
-
20
16
12
8
4
0
0
LET=37 ± 5%
LET=60 ± 5%
LET=81 ± 5%
-2 -4 -6 -8
Bias VGS (V)
-10
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHLF87Y20 電子部品, 半導体
IRHLF87Y20
Pre-Irradiation
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0.1
VGS = 0V, f = 1.0 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0
VGS = 0V
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
12
ID = 12A
10
8
VDS = 16V
VDS = 10V
VDS = 6.0V
6
4
2 FOR TEST CIRCUIT
SEE FIGURE 17
0
0 4 8 12 16 20 24 28 32 36 40
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
20
LIMITED BY PACKAGE
16
12
8
4
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current Vs.
Case Temperature
www.irf.com

6 Page



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部品番号部品説明メーカ
IRHLF87Y20

RADIATION HARDENED LOGIC LEVEL POWER MOSFET

International Rectifier
International Rectifier


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