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2SA1310 の電気的特性と機能

2SA1310のメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SA1310
部品説明 Silicon PNP Epitaxial Transistor
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 




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2SA1310 Datasheet, 2SA1310 PDF,ピン配置, 機能
Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
s Features
q Allowing supply with the radial taping.
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Optimum for high-density mounting.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–55
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
– 0.1 µA
–1 µA
–60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
–55 V
–7 V
180 700
Collector to emitter saturation voltage VCE(sat)
IC = –100mA, IB = –10mA
– 0.6
V
Base to emitter voltage
VBE VCE = –1V, IC = –30mA
–1 V
Transition frequency
fT VCB = –5V, IE = 2mA, f = 200MHz
200 MHz
Noise voltage
VCE = –10V, IC = –1mA, GV = 80dB
NV
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1

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共有リンク

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部品番号部品説明メーカ
2SA1310

Silicon PNP Epitaxial Transistor

Panasonic Semiconductor
Panasonic Semiconductor
2SA1310

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

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TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

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