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FGPF4633 の電気的特性と機能

FGPF4633のメーカーはFairchild Semiconductorです、この部品の機能は「PDP IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGPF4633
部品説明 PDP IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGPF4633 Datasheet, FGPF4633 PDF,ピン配置, 機能
FGPF4633
330V PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
February 2010
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Potted)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5µsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
300
30.5
12.2
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.1
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4633 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

1 Page





FGPF4633 pdf, ピン配列
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
300
TC = 25oC
250
20V
15V
12V
200
10V
150
100
VGE = 8V
50
0
0123456
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
300
Common Emitter
250
VGE = 15V
TC = 25oC
TC = 125oC
200
7
150
100
50
0
0123456
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.8
Common Emitter
VGE = 15V
1.6
70A
1.4
1.2 40A
1.0
IC = 20A
0.8
-55 -30 0 30 60 90 120 150
Collector-EmitterCase Temperature, TC [oC]
Figure 2. Typical Output Characteristics
300
TC = 125oC 20V 15V
250
12V
200
10V
150
100
VGE = 8V
50
0
0123456
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
7
300
Common Emitter
VCE = 20V
250 TC = 25oC
TC = 125oC
200
150
100
50
0
2 4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
14
20
Common Emitter
TC = 25oC
16
12
8
40A
70A
4
IC = 20A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
FGPF4633 Rev. A
3 www.fairchildsemi.com


3Pages


FGPF4633 電子部品, 半導体
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
5
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
single pulse
0.01
0.006
0.00001
0.0001
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
FGPF4633 Rev. A
6 www.fairchildsemi.com

6 Page



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共有リンク

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部品番号部品説明メーカ
FGPF4633

PDP IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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