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PDF IXTH6N100D2 Data sheet ( Hoja de datos )

Número de pieza IXTH6N100D2
Descripción Depletion Mode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! IXTH6N100D2 Hoja de datos, Descripción, Manual

Depletion Mode
MOSFET
N-Channel
Preliminary Technical Information
IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
VDSX
ID(on)
=
>
RDS(on)
1000V
6A
2.2Ω
TO-263 AA (IXTA)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
1000
V
±20 V
±30 V
300 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 250μA
IGSX VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 3A, Note 1
VGS = 0V, VDS = 50V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1000
V
- 2.5
- 4.5 V
±100 nA
5 μA
50 μA
2.2 Ω
6A
G
S
D (Tab)
TO-220AB (IXTP)
GD S
TO-247 (IXTH)
D (Tab)
G
DS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
Ramp Generators
• Current Regulators
• Active Loads
© 2009 IXYS CORPORATION, All Rights Reserved
DS100183A(12/09)
Free Datasheet http://www.datasheet4u.com/

1 page




IXTH6N100D2 pdf
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
10,000
1,000
Fig. 13. Capacitance
Ciss
100 Coss
f = 1 MHz
Crss
10
0
5 10 15 20 25 30 35 40
VDS - Volts
100.00
10.00
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
TJ = 150ºC
TC = 25ºC
Single Pulse
RDS(on) Limit
100µs
5
4 VDS = 500V
I D = 3A
3 I G = 10mA
2
Fig. 14. Gate Charge
1
0
-1
-2
-3
-4
-5
0 10 20 30 40 50 60 70 80 90 100
QG - NanoCoulombs
100.00
10.00
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75ºC
TJ = 150ºC
TC = 75ºC
Single Pulse
RDS(on) Limit
25µs
100µs
1.00
0.10
10
1.00
100
VDS - Volts
1ms
10ms
100ms
DC
1,000
1.00
0.10
10
Fig. 17. Maximum Transient Thermal Impedance
100
VDS - Volts
1ms
10ms
100ms
DC
1,000
0.10
0.01
0.0001
0.001
© 2009 IXYS CORPORATION, All Rights Reserved
0.01 0.1
Pulse Width - Seconds
1 10
IXYS REF: T_6N100D2(6C)8-27-09

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