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IXTP60N20T の電気的特性と機能

IXTP60N20TのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP60N20T
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTP60N20T Datasheet, IXTP60N20T PDF,ピン配置, 機能
TrenchTM
Power MOSFET
N-Channel Enhancement Mode
For PDP Drivers
Avalanche Rated
IXTA60N20T
IXTP60N20T
IXTQ60N20T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220 &TO-3P)
TO-263
TO-220
TO-3P
Maximum Ratings
200
200
V
V
±20 V
±30 V
60 A
150 A
30 A
700 mJ
500 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
2.5 g
3.0 g
5.5 g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
200 V
3.0 5.0 V
±200 nA
1 μA
250 μA
32 40 mΩ
VDSS = 200V
ID25 = 60A
RDS(on) 40mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
TO-3P (IXTQ)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z High Current Handling Capability
z 175°C Operating Temperature
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99359B(7/10)
Free Datasheet http://www.datasheet4u.com/

1 Page





IXTP60N20T pdf, ピン配列
IXTA60N20T IXTP60N20T
IXTQ60N20T
Fig. 1. Output Characteristics @ TJ = 25ºC
60
VGS = 15V
10V
50 8V
7V
40
30 6V
20
10
0
0
5V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS - Volts
2
Fig. 3. Output Characteristics @ TJ = 150ºC
60
VGS = 15V
10V
50 7V
40
6V
30
20
5V
10
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.
Drain Current
5.0
4.5 VGS = 10V
4.0
TJ = 175ºC
3.5
3.0
2.5
TJ = 25ºC
2.0
1.5
1.0
0.5
0
20 40
60 80 100 120 140 160 180 200
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200
VGS = 15V
180 10V
160
8V
140
120
7V
100
80
60
6V
40
20
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.
Junction Temperature
3.4
3.0 VGS = 10V
2.6
I D = 60A
2.2
I D = 30A
1.8
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXTP60N20T

Power MOSFET ( Transistor )

IXYS
IXYS


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