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PDF IXTP60N10T Data sheet ( Hoja de datos )
| Número de pieza | IXTP60N10T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA60N10T
IXTP60N10T
VDSS = 100V
ID25 = 60A
RDS(on) ≤ 18mΩ
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Maximum Ratings
100
100
V
V
± 30 V
60 A
180 A
10 A
500 mJ
176 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in
2.5 g
3.0 g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 100 nA
1 μA
100 μA
14.8 18 mΩ
G
S
TO-220 (IXTP)
(TAB)
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z 175°C Operating Temperature
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z DC/DC Converters and Off-line UPS
z Primary Switch for 24V and 48V
Systems
z High Current Switching Applications
z Distributed Power Architechtures
and VRMs
z Electronic Valve Train Systems
z High Voltage Synchronous Recifier
© 2007 IXYS CORPORATION, All rights reserved
DS99647B(08/08)
Free Datasheet http://www.datasheet4u.com/
1 page  
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
60
RG = 15Ω
55 VGS = 10V
VDS = 50V
50
45
40 I D = 30A
35
30 I D = 10A
25
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
170
t r td(on) - - - -
150 TJ = 125ºC, VGS = 10V
VDS = 50V
130
I D = 30A
110
10A < I D < 30A
90
I D = 10A
80
70
60
50
40
70 30
50 20
30 10
15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
40
39 t f td(off) - - - -
RG = 15Ω, VGS = 10V
38 VDS = 50V
67
63
59
37 TJ = 125ºC
36
55
51
35 47
34 43
TJ = 25ºC
33 39
32 35
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
© 2007 IXYS CORPORATION, All rights reserved
IXTA60N10T
IXTP60N10T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
60
RG = 15Ω
55 VGS = 10V
VDS = 50V
50
TJ = 25ºC
45
40
35
TJ = 125ºC
30
25
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
39 64
38
37 t f
td(off) - - - -
RG = 15Ω, VGS = 10V
36 VDS = 50V
35
I D = 10A
I D = 30A
60
56
52
48
34 44
33 40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
120 185
110 t f
td(off) - - - -
100
TJ = 125ºC, VGS = 10V
VDS = 50V
90
I D = 10A, 30A
170
155
140
80 125
70 110
60 95
50 80
40 65
30 50
15 20 25 30 35 40 45 50 55
RG - Ohms
IXYS REF: T_60N10T(2V)8-07-08-A
5 Page | ||
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| PDF Descargar | [ Datasheet IXTP60N10T.PDF ] | |
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