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IXTP26P20PのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXTP26P20P |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXTP26P20Pダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Preliminary Technical Information
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA26P20P
IXTH26P20P
IXTP26P20P
IXTQ26P20P
TO-247 (IXTH)
VDSS =
ID25 =
≤RDS(on)
- 200V
- 26A
170mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
GS
D(TAB)
G DS
D(TAB)
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
- 200
- 200
±20
±30
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
- 26
- 70
- 26
50
1.5
10
300
-55 ... +175
175
-55 ... +175
A
A
A
mJ
J
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-3P,TO-220,TO-247)
300
260
1.13/10
°C
°C
Nm/lb.in.
TO-247
TO-3P
TO-220
TO-263
6.0 g
5.5 g
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = -250 μA
VGS(th)
VDS = VGS, ID = -250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.5
- 4.5 V
±100 nA
- 10 μA
- 250 μA
170 mΩ
G DS
TO-3P (IXTQ)
D(TAB)
G
D
S
G = Gate
S = Source
D(TAB)
D = Drain
TAB = Drain
Features:
z International standard packages
z Fast intrinsic diode
z Dynamic dV/dt Rated
z Avalanche Rated
z Rugged PolarPTM process
z Low QG and Rds(on) characterization
z Low Drain-to-Tab capacitance
z Low package inductance
- easy to drive and to protect
Applications:
z Hight side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z Improved Gate, Avalanche and
dynamic dV/dt ruggedness
z High power density
z Fast switching
© 2007 IXYS CORPORATION, All rights reserved
DS99913(10/07)
Free Datasheet http://www.datasheet4u.com/
1 Page TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
TO-247 (IXTH) Outline
123
∅P
e
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-3P (IXTQ) Outline
Pins: 1 - Gate
2 - Drain
© 2007 IXYS CORPORATION, All rights reserved
3Pages 1.00
0.10
0.01
0.0001
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_26P20P(B5)10-10-07
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXTP26P20P | Power MOSFET ( Transistor ) | IXYS |