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PDF IXTA26P20P Data sheet ( Hoja de datos )
| Número de pieza | IXTA26P20P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA26P20P
IXTH26P20P
IXTP26P20P
IXTQ26P20P
TO-247 (IXTH)
VDSS =
ID25 =
≤RDS(on)
- 200V
- 26A
170mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
GS
D(TAB)
G DS
D(TAB)
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
- 200
- 200
±20
±30
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
- 26
- 70
- 26
50
1.5
10
300
-55 ... +175
175
-55 ... +175
A
A
A
mJ
J
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-3P,TO-220,TO-247)
300
260
1.13/10
°C
°C
Nm/lb.in.
TO-247
TO-3P
TO-220
TO-263
6.0 g
5.5 g
3.0 g
2.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = -250 μA
VGS(th)
VDS = VGS, ID = -250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
- 200
V
- 2.5
- 4.5 V
±100 nA
- 10 μA
- 250 μA
170 mΩ
G DS
TO-3P (IXTQ)
D(TAB)
G
D
S
G = Gate
S = Source
D(TAB)
D = Drain
TAB = Drain
Features:
z International standard packages
z Fast intrinsic diode
z Dynamic dV/dt Rated
z Avalanche Rated
z Rugged PolarPTM process
z Low QG and Rds(on) characterization
z Low Drain-to-Tab capacitance
z Low package inductance
- easy to drive and to protect
Applications:
z Hight side switching
z Push-pull amplifiers
z DC Choppers
z Current regulators
z Automatic test equipment
Advantages:
z Low gate charge results in simple
drive requirement
z Improved Gate, Avalanche and
dynamic dV/dt ruggedness
z High power density
z Fast switching
© 2007 IXYS CORPORATION, All rights reserved
DS99913(10/07)
Free Datasheet http://www.datasheet4u.com/
1 page  
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
Fig. 7. Input Admittance
-45
-40
-35
TJ = - 40ºC
25ºC
150ºC
-30
-25
-20
-15
-10
-5
0
-3 -3.5 -4 -4.5 -5 -5.5 -6 -6.5 -7
VGS - Volts
-80
-70
-60
-50
-40
-30
-20
-10
0
-0.5
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 150ºC
TJ = 25ºC
-1 -1.5 -2 -2.5 -3 -3.5
VSD - Volts
-4
10,000
f = 1 MHz
Fig. 11. Capacitance
1,000
Ciss
Coss
100
Crss
10
0
-5 -10 -15 -20 -25 -30 -35 -40
VDS - Volts
32
28
24
20
16
12
8
4
0
0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC
150ºC
-5 -10 -15 -20 -25 -30 -35 -40 -45 -50
ID - Amperes
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
Fig. 10. Gate Charge
VDS = -100V
I D = - 13A
I G = -1mA
5 10 15 20 25 30 35 40 45 50 55 60
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
-100
RDS(on) Limit
25µs
100µs
1ms
- 10
10ms
-1
- 10
TJ = 175ºC
TC = 25ºC
Single Pulse
DC 100ms
- 100
VDS - Volts
- 1000
© 2007 IXYS CORPORATION, All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTA26P20P.PDF ] | |
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