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PDF IXTH260N055T2 Data sheet ( Hoja de datos )
| Número de pieza | IXTH260N055T2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
TrenchT2TM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH260N055T2
VDSS =
ID25 =
RDS(on) ≤
55V
260A
3.3mΩ
TO-247
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
M
d
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
55
55
V
V
± 20 V
260 A
160 A
780 A
100 A
600 mJ
480 W
-55 ... +175
175
-55 ... +175
300
260
°C
°C
°C
°C
°C
1.13 / 10
Nm/lb.in.
6g
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA
5 μA
150 μA
3.3 mΩ
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard package
z 175°C Operating Temperature
z High current handling capability
z Avalanche rated
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- 12V Battery
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS100078(11/08)
Free Datasheet http://www.datasheet4u.com/
1 page  
IXTH260N055T2
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
I D = 200A
RG = 2Ω
VGS = 10V
VDS = 28V
I D = 100A
35 45 55 65 75 85 95 105 115
TJ - Degrees Centigrade
125
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
160
140 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
120
VDS = 28V
100 I D = 200A, 100A
90
80
70
60
80 50
60 40
40 30
20 20
0 10
2 4 6 8 10 12 14 16
RG - Ohms
44
40
36
32
28
24
20
16
12
8
40
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
t f td(off) - - - -
RG = 2Ω, VGS = 10V
VDS = 28V
TJ = 125ºC
TJ = 25ºC
60 80 100 120 140 160 180
ID - Amperes
65
60
55
50
45
40
35
30
25
20
200
32
31
30
29
28
27
26
25
24
40
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
TJ = 125ºC
RG = 2Ω
VGS = 10V
VDS = 28V
TJ = 25ºC
60 80 100 120 140 160 180 200
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
55 60
50 t f
td(off) - - - -
RG = 2Ω, VGS = 10V
45 VDS = 28V
55
50
40
35 I D = 200A, 100A
45
40
30 35
25 30
20 25
15 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
275
250
225
200
175
150
125
100
75
50
25
0
2
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 28V
I D = 100A, 200A
4 6 8 10 12 14
RG - Ohms
240
220
200
180
160
140
120
100
80
60
40
20
16
© 2008 IXYS CORPORATION, All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTH260N055T2.PDF ] | |
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