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PDF GM195 Data sheet ( Hoja de datos )
| Número de pieza | GM195 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
GM195
Description
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
The GM195 is designed for medium power amplifier applications.
Features
-60 Volt VCEO
1 Amp continuous current
Complementary to GM194
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation
PD
Ratings
+150
-55~+150
-80
-60
-5
-1
-2
-200
1
Unit
V
V
V
A
A
mA
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
-80 -
*BVCEO
BVEBO
-60 -
-5 -
ICBO
--
ICES
IEBO
--
--
*VCE(sat)1
--
*VCE(sat)2
--
*VBE(sat)
--
*VBE(on)
*hFE1
*hFE2
--
100 -
100 -
*hFE3
80 -
*hFE4
fT
15 -
150 -
Cob - -
, unless otherwise stated)
Max.
Unit
Test Conditions
- V IC=-100uA , IE=0
- V IC=-10mA, IB=0
- V IE=-100uA ,IC=0
-100
nA VCB=-60V, IE=0
-100
-100
nA VCES=-60V
nA VEB=-4V, IC=0
-0.3 V IC=-500mA, IB=-50mA
-0.6 V IC=-1A, IB=-100mA
-1.2 V IC=-1A, IB=-100mA
-1.0 V VCE=-5V, IC=-1A
VCE=-5V, IC=-1mA
300 VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
- MHz VCE=-10V, IC=-50mA, f=100MHz
10 pF VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
GM195
Page: 1/2
Free Datasheet http://www.datasheet4u.com/
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