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PDF Z0103MA0 Data sheet ( 特性 )

部品番号 Z0103MA0
部品説明 4Q Triac Direct interfacing to logic level ICs
メーカ NXP Semiconductors
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Z0103MA0 Datasheet, Z0103MA0 PDF,ピン配置, 機能
Z0103MA0
4Q Triac
Rev. 01 — 3 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package
intended for use in applications requiring enhanced noise immunity and direct interfacing
to logic ICs and low power gate drivers.
1.2 Features and benefits
„ Direct interfacing to logic level ICs
„ Enhanced current surge capability
„ Enhanced noise immunity
„ High blocking voltage capability
„ Sensitive gate triggering in all four
quadrants
1.3 Applications
„ General purpose low power motor
control
„ Home appliances
„ Industrial process control
„ Low power AC Fan controllers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
ITSM
non-repetitive peak
full sine wave; Tj(init) = 25 °C;
on-state current
tp = 20 ms; see Figure 4;
see Figure 5
IT(RMS)
RMS on-state current
full sine wave; Tlead 38 °C;
see Figure 3; see Figure 1;
see Figure 2
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 7
Min Typ Max Unit
- - 600 V
- - 12.5 A
- - 1A
0.2 -
0.2 -
0.2 -
0.2 -
3 mA
3 mA
3 mA
5 mA
Free Datasheet http://www.datasheet4u.com/

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Z0103MA0 pdf, ピン配列
NXP Semiconductors
Z0103MA0
4Q Triac
16
IT(RMS)
(A)
12
8
4
0
10-2
10-1
003aac263
1 10
surge duration (s)
1.2
IT(RMS)
(A)
0.8
003aac264
0.4
0
50
0
50 100 150
Tlead (°C)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
2.0
Ptot
(W)
1.6
1.2
conduction form
angle factor
(degrees) a
30 4
60 2.8
90 2.2
120 1.9
180 1.57
0.8
α
0.4
Fig 2. RMS on-state current as a function of lead
temperature; maximum values
003aac259
α= 180°
120°
90°
60°
30°
0.0
0
0.2 0.4 0.6 0.8
1 1.2
IT(RMS) (A)
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values
Z0103MA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
3 of 13


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Z0103MA0 電子部品, 半導体
NXP Semiconductors
Z0103MA0
4Q Triac
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT gate trigger current
IL latching current
IH holding current
VT on-state voltage
VGT gate trigger voltage
ID off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt
rate of change of
commutating voltage
Conditions
Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; 0.2 -
see Figure 7
3 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; 0.2 -
see Figure 7
3 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; 0.2 -
see Figure 7
3 mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; 0.2 -
see Figure 7
5 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
- - 7 mA
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; - - 20 mA
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; - - 7 mA
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; - - 7 mA
see Figure 8
VD = 12 V; Tj = 25 °C; see Figure 12
IT = 1 A; Tj = 25 °C; see Figure 9
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 10
- - 7 mA
- 1.3 1.6 V
- - 1.3 V
VD = 600 V; IT = 0.1 A; Tj = 125 °C
VD = 600 V; Tj = 125 °C
0.2 -
--
-V
0.5 mA
VDM = 402 V; Tj = 110 °C; gate open
circuit; exponential waveform;
see Figure 11
80 - - V/µs
VD = 400 V; Tj = 110 °C;
0.5 - - V/µs
dIcom/dt = 0.44 A/ms; gate open circuit
Z0103MA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
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