|
|
2SA1020のメーカーはToshiba Semiconductorです、この部品の機能は「TRANSISTOR (POWER AMPLIFIER APPLICATIONS)」です。 |
部品番号 | 2SA1020 |
| |
部品説明 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SA1020ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications
Power Switching Applications
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SC2655
2SA1020
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
−50
−50
−5
−2
900
150
−55 to 150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.5 A
VCE = −2 V, IC = −1.5 A
IC = −1 A, IB = −0.05 A
IC = −1 A, IB = −0.05 A
VCE = −2 V, IC = −0.5 A
VCB = −10 V, IE = 0, f = 1 MHz
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
⎯ ⎯ −1.0 µA
⎯ ⎯ −1.0 µA
−50 ⎯
⎯
V
70 ⎯ 240
40 ⎯ ⎯
⎯
⎯ −0.5
V
⎯
⎯ −1.2
V
⎯ 100 ⎯ MHz
⎯ 40 ⎯ pF
Turn-on time
Switching time Storage time
ton
Output
⎯ 0.1 ⎯
20 µs
Input IB2
tstg IB2 IB1
⎯ 1.0 ⎯
µs
VCC = −30 V
Fall time
tf −IB1 = IB2 = 0.05 A
DUTY CYCLE ≤ 1%
⎯ 0.1 ⎯
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
1 2004-07-07
Free Datasheet http://www.Datasheet4U.com
1 Page VCE – IC
−1.0
Common emitter
−0.8
IB = −5 mA
−10
Ta = 25°C
−20 −40 −80
−120
−0.6
−160
−0.4 −200
−0.2
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8
Collector current IC (A)
VCE – IC
−1.0
Common emitter
IB = −10 mA
−0.8
−20
−40 −60
−30
Ta = −55°C
−80
−0.6 −120
−160
−0.4 −200
−0.2
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8
Collector current IC (A)
2SA1020
VCE – IC
−1.0
Common emitter
−0.8
IB = −5 mA
−20 −30 −40 −60 Ta = 100°C
−80
−120
−0.6 −160
−180
−0.4 −200
−0.2
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8
Collector current IC (A)
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = −2 V
Ta = 100°C
25
−55
10
−0.01
−0.03 −0.1 −0.3
−1
Collector current IC (A)
−3
VCE (sat) – IC
−1
Common emitter
−0.5 IC/IB = 20
−0.3
−0.1
−0.05
−0.03
Ta = 100°C
−55
25
−0.01
−0.01
−0.03 −0.1 −0.3
−1
Collector current IC (A)
−3
VBE (sat) – IC
−10
Common emitter
−5 IC/IB = 20
−3
Ta = −55°C
−1
−0.5 25
−0.3 100
−0.1
−0.01
−0.03
−0.1 −0.3
−1
Collector current IC (A)
−3
3 2004-07-07
Free Datasheet http://www.Datasheet4U.com
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ 2SA1020 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SA102 | (2SA100 - 2SA104) Ge PNP Drift | ETC |
2SA1020 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SA1020 | TO-92MOD Plastic-Encapsulated Transistors | ETC |
2SA1020 | PNP EPITAXIAL SILICON TRANSISTOR | Unisonic Technologies |