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H926 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H926
部品説明 PNP SILICON TRANSISTOR
メーカ SHANTOU HUASHAN ELECTRONIC DEVICES
ロゴ SHANTOU HUASHAN ELECTRONIC DEVICES ロゴ 



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H926 Datasheet, H926 PDF,ピン配置, 機能
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H926
POWER SUPPLIESRELAY DRIVERS
LAMP DRIVERSELECTRICAL EQUIPMENT
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………-30V
VCEO——Collector-Emitter Voltage……………………………-25V
VEBO——Emitter-Base Voltage………………………………-6V
IC——Collector Current……………………………………-2A
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
HFE(1) DC Current Gain
HFE(2)
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
fT Current Gain-Bandwidth Product
Cob Output Capacitance
* pulse
hFE Classification
Min Typ Max Unit
Test Conditions
http://www.DataSheet4U.net/
-30
V IC=-10μA, IE=0
-25 V IC=-1mA, IB=0
-6 V IE=-10μAIC=0
100 560 VCE=-2V, IC=-100mA
65 130
VCE=-2V, IC=-1.5A *
-0.35 -0.6 V IC=-1.5A, IB=-75mA *
-0.85 -1.2 V IC=-1.5A, IB=-75mA *
-100 nA VCB=-20V, IE=0
-100 nA VEB=-4V, IC=0
150 MHz VCE=-10V, IC=-50mA
32 pF VCB=-10V, IE=0f=1MHz
R
100—200
S
140—280
T
200—400
U
280—560
datasheet pdf - http://www.DataSheet4U.net/

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