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Número de pieza | 1N5826R | |
Descripción | (1N5826 - 1N5828R) Schottky Power Diode | |
Fabricantes | Naina Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N5826R (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 15A
1N5826 thru
1N5828R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
TC ≤ 100oC
TC = 25oC
Forward voltage
Reverse current
IF = 15 A
TJ = 25oC
VR = 20V, TJ = 25oC
VR = 20V, TJ = 125oC
Symbol
VRRM
VRMS
VDC
IF
IFSM
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VF
IR
1N5826(R)
20
14
20
15
500
0.45
10
250
1N5827(R)
30
21
30
15
500
0.47
10
250
1N5828(R)
40
28
40
15
Units
V
V
V
A
500 A
0.5 V
10
mA
250
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol 1N5826(R)
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Rth(JC)
TJ
Tstg
Mounting torque (non-lubricated threads)
F
Approximate allowable weight
W
1N5827(R)
1.8
-65 to 150
-65 to 175
4.0
17.0
1N5828(R)
Units
oC/W
oC
oC
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 1N5826R.PDF ] |
Número de pieza | Descripción | Fabricantes |
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