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PDF 1N5830 Data sheet ( Hoja de datos )
| Número de pieza | 1N5830 | |
| Descripción | (1N5829 - 1N5831R) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 25A
1N5829 thru
1N5831R
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
Forward voltage
Reverse current
TC ≤ 100oC
TC = 25oC
tp = 8.3 ms
IF = 25 A
TJ = 25oC
VR = 20V, TJ = 25oC
VR = 20V, TJ = 125oC
Symbol
VRRM
VRMS
VDC
IF
IFSM
http://www.DataSheet4U.net/
VF
IR
1N5829(R)
20
14
20
25
800
0.58
2
250
1N5830(R)
25
17
25
25
800
0.58
2
250
1N5831(R)
35
25
35
25
Units
V
V
V
A
800 A
0.58 V
2
mA
250
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol 1N5829(R)
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Rth(JC)
TJ
Tstg
Mounting torque (non-lubricated threads)
F
Approximate allowable weight
W
1N5830(R)
1.8
-55 to 150
-55 to 175
2.0
5.0
1N5831(R)
Units
oC/W
oC
oC
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N5830.PDF ] | |
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