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PDF ETH0806-M3 Data sheet ( Hoja de datos )
| Número de pieza | ETH0806-M3 | |
| Descripción | Hyperfast Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-ETH0806-M3, VS-ETH0806FP-M3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
1
Cathode
3
Anode
VS-ETH0806-M3
1
Cathode
2
Anode
VS-ETH0806FP-M3
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
2L TO-220AC, 2L TO-220FP
8A
600 V
2.65 V
16 ns
175 °C
Single die
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
• True 2 pin package
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified according to JEDEC-JESD47
DESCRIPTION/APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
currenthttp://www.DataSheet4U.net/ minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
FULL-PAK
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 146 °C
TC = 114 °C
TJ = 25 °C
VALUES
600
8
80
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
Forward voltage
IF = 8 A
VF
IF = 8 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 600 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.3
0.02
15
6
8
MAX. UNITS
-
2.65
1.85
12
100
-
-
V
μA
pF
nH
Document Number: 93515 For technical questions within your region, please contact one of the following:
Revision: 10-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
datasheet pdf - http://www.DataSheet4U.net/
1 page  
VS-ETH0806-M3, VS-ETH0806FP-M3
Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors
360
320
280
240
If = 8A, 125°C
200
160 If = 8A, 25°C
120
typical value
80
100 1000
di F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dIF/dt
3500
3000
2500
If = 8A, 125°C
2000
1500
If = 8A, 25°C
1000
VR = 200 V
500
typical value
0
100
1000
di F/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dIF/dt
0.01 Ω
dIF/dt
adjust
L = 70 μH
http://www.DataSheet4U.net/
D
D.U.T.
G IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
Qrr =
trr x IRRM
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93515 For technical questions within your region, please contact one of the following:
Revision: 10-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ETH0806-M3.PDF ] | |
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