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PDF CPM2-1200-0080B Data sheet ( Hoja de datos )
| Número de pieza | CPM2-1200-0080B | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | CREE | |
| Logotipo |  |
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VDS
1200 V
CPM2-1200-0080B
Silicon Carbide Power MOSFET
Z-FETTM MOSFET
ID @ 25˚C 31.6 A
RDS(on)
80 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
•
•
High Blocking Voltage with Low RDS(on)
Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
•
•
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
UPS
Part Number
CPM2-1200-0080B
http://www.DataSheet4U.net/
Package
Die
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
IDS (DC) Continuous Drain Current
IDS (pulse) Pulsed Drain Current
31.6
20
60
A VGS@20 V, TC = 25˚C
VGS@20 V, TC = 100˚C
A Pulse width tP limited by Tjmax
TC = 25˚C
VGS Gate Source Voltage
-10/+25 V
TJ , Tstg Operating Junction and Storage Temperature
-55 to
+150
˚C
TL Solder Temperature
260 ˚C
Note 1: Assumes a RθJC < 0.60 K/W
f
Note
Note 1
1 CPM2-1200-0080B Rev. -
datasheet pdf - http://www.DataSheet4U.net/
1 page  
Typical Performance
-5 -4
Conditions:
TJ = 150 °C
-3
VGS = 0 V
-2 -1
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
0
0
-10
-20
-30
60
50
40
30
20
-40
Drain-Source Voltage, VDS (V)
-50
Figure 13. Typical 3rd Quadrant Characteristics
Characteristic TJ = 150 ºC
10000
Conditions:
VGS = 0 V
ftest = 1 MHz
1000
CISS
10
0
0
200
400
600
800
1000
1200
Drain-Source Voltage, VDS (V)
Figure 14. Typical transfer Characteristics
10000
1000
Conditions
VGS = 0 V
ftest = 1 MHz
CISS
100
10
COSS
CRSS
100
http://www.DataSheet4U.net/
10
COSS
CRSS
1
0
50 100 150
Drain-Source Voltage, VDS (V)
200
1
0
200 400 600 800
Drain-Source Voltage, VDS (V)
Figure 15A and 15B. Typical Capacitances vs. Drain Voltage at VGS = 0 V and f = 1 MHz
20
Conditions:
VDS = 800 V
IDS = 20 A
16 IGS = 10 mA
TJ = 25 C
12
8
4
0
0 10 20 30 40 50
Gate-Source Charge, QGS (nC)
Figure 16. Typical Gate Characteristic 25 ºC
1000
5 CPM2-1200-0080B Rev. -
datasheet pdf - http://www.DataSheet4U.net/
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