PDF IS32WV204816B Data sheet ( Hoja de datos )

Número de pieza	IS32WV204816B
Descripción	2M x 16 (32-Mbit) PSEUDO STATIC RAM
Fabricantes	ISSI
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No Preview Available ! IS32WV204816B ISSI® 2M x 16 (32-Mbit) PSEUDO STATIC RAM MAY 2004 FEATURES • Access time: 70ns • TTL compatible inputs and outputs; tri-state I/O • Wide Power supply voltage: 2.2V to 3.6V • CMOS Standby: 70µA (32-Mbit) • Deep Power Down Standby: 5µA (32-Mbit) • Deep Power-Down Mode: Data Invalid • Page Operation Mode: Four Word Access • Logic compatible with SRAM R/W (WE) pin. • Industrial Temperature Range: -40oC to 85oC DESCRIPTION The ISSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2Meg x 16 bits. ISSI CMOS technology provides high density, high speed low power devices that features SRAM-like write timing. Data is written to memory cells on the rising edge of the WE signal. With a page size of 4 words, the device has a page access operation. The device also supports deep power- down mode providing low-power standby. The IS32WV204816B is packaged in a 48-pin mini-BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM http://www.DataSheet4U.net/ A0-A1 A2-A20 VDD GND I/O0-I/O15 DECODER I/O DATA CIRCUIT 2Mb x 16 MEMORY ARRAY COLUMN I/O UB LB CS1 CS2 WE OE CONTROL CIRCUIT Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 04/29/04 1 datasheet pdf - http://www.DataSheet4U.net/ 1 page IS32WV204816B ISSI ® RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.) Symbol VDD VIH VIL VDH Parameter Supply Voltage Input High Voltage Input Low Voltage Data Retention Supply Voltage Min. 2.2 2.0 –0.2 2.0 Typ. — — — Max. 3.6 VDD + 03 0.4 3.0 Unit V V V V ELECTRICAL CHARACTERISTICS(1) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter IIL Input Leakage Current IIO Output Leakage Current VOH Output High Voltage Level VOL Output Low Voltage Level ICC1 Operating Current ICC2 Page Access Operating Current ISB1 Standby Current: TTL ISB2 Standby Current: CMOS ISB3 Standby Current: Deep Power-down Test Condition Any input 0V ≤ VIN ≤ VDD Other inputs not under test = 0V Output is disabled (Hi-Z) 0V ≤ VOUT ≤ VDD IOH = –0.5 mA IOL = 1.0 mA CS1 =VIH, IOUT = 0mA CS1 Cycling, tRC = tRC (min.) CS1=VIL, CS2=VIH, IOUT = 0mA http://www.DataSheet4U.net/ Page Add. Cycling, tPC (min.) CS1=VIH, CS2=VIH CS1=Vss-0.2V, CS2=VDD-0.2V CS1=0.2V Min. Max. Unit –1.0 1.0 µA –1.0 1.0 µA 1.9 — V — 0.2 V — 30 mA — 25 mA — 1 mA — 70 µA — 5 µA Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 04/29/04 5 datasheet pdf - http://www.DataSheet4U.net/ 5 Page IS32WV204816B AC WAVEFORMS Write Timing (WE Control Write) ISSI ® CS1 CS2 A0~A1 A2~A20 OE WE LB, UB Din Dout tCH tASC tRC tCE tAPH tASW tAHW http://www.DataSheet4U.net/ tWHC tWCH tCWL tWP tP tWR tP tWBH tDSW tDHW Data Input Valid High Impedance Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 04/29/04 11 datasheet pdf - http://www.DataSheet4U.net/ 11 Page

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Número de pieza	Descripción	Fabricantes
IS32WV204816B	2M x 16 (32-Mbit) PSEUDO STATIC RAM	ISSI

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