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PDF IS31AP2010E Data sheet ( Hoja de datos )

Número de pieza IS31AP2010E
Descripción MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER
Fabricantes ISSI 
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IS31AP2010E
MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER
Advanced Information
May 2012
GENERAL DESCRIPTION
The IS31AP2010E is a high efficiency, mono filter-less
class-D audio power amplifier. A low noise, filter-less
PWM architecture eliminates the output filter, reduces
external component count, system cost, and
simplifying design.
In cellular handsets, the earpiece, speaker phone, and
melody ringer speaker can each be driven by the
IS31AP2010E. The gain of IS31AP2010E is externally
configurable which allows independent gain control
from multiple sources by summing signals from each
function.
IS31AP2010E is available in UTQFN-9 packages. It
operates from 2.7V to 5.5V over the temperature range of
-40°C to +85°C.
FEATURES
Supply voltage from 2.7V ~ 5.5V
High efficiency
Less than 1μA shutdown current
Optimized PWM output stage eliminates LC
output filter
Fully differential design reduces RF rectification
and eliminates bypass capacitor
Improved CMRR eliminates two input coupling
capacitors
Integrated click-and-pop suppression circuitry
UTQFN-9 package
RoHS compliant and 100% lead(Pb)-free
APPLICATIONS
Wireless or cellular handsets and PDAs
Portable DVD player
Notebook PC
Portable radio
Educational toys
Portable gaming
TYPICAL APPLICATION CIRCUIT
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Differential
Input
VBattery
B1,B2
VCC
CS
1F
0.1 F
CIN-
RIN-
OUT+
0.1 F 150k
C1 OUT-
IN-
A1 IS31AP2010E
IN+
C3
A3
CIN+
RIN+
0.1 F 150k
Shutdown
Control
100k
C2
SDB
A2,B3
GND
Figure 1 Typical Application Circuit (Differential Input)
Integrated Silicon Solution, Inc. – www.issi.com
Rev. 00A, 05/02/2012
1
datasheet pdf - http://www.DataSheet4U.net/

1 page




IS31AP2010E pdf
IS31AP2010E
ABSOLUTE MAXIMUM RATINGS
Supply voltage, VCC
Voltage at any input pin
Junction temperature, TJMAX
Storage temperature range, Tstg
-0.3V ~ +6.0V
-0.3V ~ VCC+0.3V
+150°C
-65°C ~ +150°C
Note:
1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
VCC = 2.7V ~ 5.5V, TA = 25°C, unless otherwise noted. (Note 1)
Symbol
Parameter
Condition
VCC Supply voltage
Output offset voltage
VOS (measured differentially)
ICC Quiescent current
ISD
fsw
RIN
Gain
VIH
VIL
Shutdown current
Switching frequency
Input resistor
High-level input voltage
Low-level input voltage
VSDB = 0V, AV = 2V/V
VCC = 5.5V, no load
VCC = 2.7V, no load
VSDB = 0.4V
Gain 20V/V
RIN = 150k
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Min.
2.7
15
1.4
0
Typ.
10
2.6
1.2
250
2
Max.
5.5
1
VCC
0.4
Unit
V
mV
mA
μA
kHz
k
V/V
V
V
Integrated Silicon Solution, Inc. – www.issi.com
Rev. 00A, 05/02/2012
5
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