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PDF IS31AP2005 Data sheet ( Hoja de datos )

Número de pieza IS31AP2005
Descripción 2.95W MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER
Fabricantes ISSI 
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IS31AP2005
2.95W MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER
GENERAL DESCRIPTION
The IS31AP2005 is a high efficiency, 2.95W mono
class-D audio power amplifier. A low noise, filter-less
PWM architecture eliminates the output filter, reducing
external component count, system cost, and
simplifying design.
Operating in a single 5V supply, IS31AP2005 is
capable of driving 4speaker load at a continuous
average output of 2.95W with 10% THD+N. The
IS31AP2005 has high efficiency with speaker load
compared to a typical class AB amplifier.
In cellular handsets, the earpiece, speaker phone, and
melody ringer can each be driven by the IS31AP2005.
The gain of IS31AP2005 is externally configurable
which allows independent gain control from multiple
sources by summing signals from each function.
The IS31AP2005 is available in DFN and MSOP
packages.
FEATURES
5V supply at THD = 10%
JULY 2011
-2.95W into 4(Typ.)
-1.70W into 8(Typ.)
Efficiency at 5V:
-83% at 400mW with a 4speaker
-89% at 400mW with an 8speaker
Optimized PWM output stage eliminates LC
output filter
Fully differential design reduces RF rectification
and eliminates bypass capacitor
Integrated pop-and-click suppression circuitry
3mm × 3mm DFN-8 and MSOP-8 package
RoHS compliant and 100% lead(Pb)-free
APPLICATIONS
Wireless or cellular handsets and PDAs
Portable DVD player
Notebook PC
Portable radio
Educational toys
USB speakers
Portable gaming
http://www.DataSheet4U.net/
TYPICAL APPLICATION CIRCUIT
Figure 1 Typical IS31AP2005 Application Schematic with Differential Input
 
Copyright  ©  2011  Integrated  Silicon  Solution,  Inc.  All  rights  reserved.  ISSI  reserves  the  right  to  make  changes  to  this  specification  and  its  products  at  any 
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are 
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. 
Integrated  Silicon  Solution,  Inc.  does  not  recommend  the  use  of  any  of  its  products  in  life  support  applications  where  the  failure  or  malfunction  of  the 
product  can  reasonably  be  expected  to  cause  failure  of  the  life  support  system  or  to  significantly  affect  its  safety  or  effectiveness.  Products  are  not 
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: 
a.) the risk of injury or damage has been minimized; 
b.) the user assume all such risks; and 
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
Rev. A, 07/06/2011
1
datasheet pdf - http://www.DataSheet4U.net/

1 page




IS31AP2005 pdf
IS31AP2005
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
Supply voltage, VDD
-0.3V ~ +6.0V
Voltage at any input pin
Junction temperature, TJMAX
-0.3V ~ VDD+0.3V
-40°C ~ +150°C
Storage temperature range, Tstg
-65°C ~ +150°C
ESD susceptibility
6kV
Lead temperature 1,6 mm (1/16 inch) from case for 10s
260°C
Thermal resistance θJA (DFN)
47°C/W
Note:
1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply voltage, VDD
High-level input voltage, VIH
Low-level input voltage, VIL
Input resistor, RI
Common mode input voltage range, VIC
Operating free-air temperature, TA
SHUTDOWN
SHUTDOWN
Gain 20V/V (26dB)
VDD = 2.7V, 5.5V
Min.
2.7
1.4
0
15
0.5
-40
Max.
5.5
VDD
0.4
VDD-0.8
85
Unit
V
V
V
k
V
°C
ELECTRICAL CHARACTERISTICS
TA = 25°C (Note 2)
Symbol Parameter
| VOS |
Output offset voltage
(measured differentially)
|IIH | High-level input current
| IIL | Low-level input current
IQ Quiescent current
ISD
fsw
Gain
Shutdown current
Switching frequency
Condition
V = 0V, A = 2V/V, V = 2.7V ~ 5.5VI V DDhttp://www.DataSheet4U.net/
VDD = 5.5V, VI = 5.8V
VDD = 5.5V, VI = -0.3V
VDD = 5.5V, no load
VDD = 2.7V, no load
VSHUTDOWN = 0.4V, VDD = 2.7V ~ 5.5V
VDD = 2.7V ~ 5.5V
VDD = 2.7V ~ 5.5V, RI = 150k
Min.
Typ.
10
2.6
1.2
250
2
Max. Unit
mV
35 μA
2 μA
mA
1 μA
kHz
V/V
Integrated Silicon Solution, Inc. – www.issi.com
Rev. A, 07/06/2011
5
datasheet pdf - http://www.DataSheet4

5 Page





IS31AP2005 arduino
IS31AP2005
1
 C I1 2RI1 fc1
1
 CI 2 2RI 2 fc 2
Cp C I1 CI 2
 Rp
RI1 RI 2
R1 RI 2
(13)
(14)
(15)
(16)
Figure 15 Application Schematic with IS31AP2005 Summing
Differential Input and Single-Ended Input Signals
Summing Two Single-Ended Input Signals
The gain and corner frequencies (fC1 and fC2) for each
input source can be set independently (see equations
(11) through (14), and Figure 16). Resistor, RP, and
capacitor, CP, are needed on the IN- terminal to match
the impedance on the IN+ terminal.
The single-ended inputs must be driven by low
impedance sources.
Gain1 VO 2 150k V 
VI1 RI1 V
Gain2 VO 2 150k V 
VI 2 RI 2 V
(11)
(12)
Figure 16 Application Schematic with IS31AP2005 Summing Two
Single-Ended Inputs
http://www.DataSheet4U.net/
Integrated Silicon Solution, Inc. – www.issi.com
Rev. A, 07/06/2011
11
datasheet pdf - http://www.DataSheet4U.net/

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