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IRL2203NSのメーカーはFreesCaleです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRL2203NS |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | FreesCale | ||
ロゴ | |||
このページの下部にプレビューとIRL2203NSダウンロード(pdfファイル)リンクがあります。 Total 8 pages
IRL2203NS/L
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l 100% RG Tested
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 7.0mΩ
ID = 116A
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.http://www.DataSheet4U.net/
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
VGS
IAR
EAR
dv/dt
Linear Derating Factor
ÃGate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMax
116
82
400
3.8
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RθJC
RθJA
k Parameter
Junction-to-Case
jkJunction-to-Ambient (PCB mount, steady state)
Typ
–––
–––
Max
0.85
40
Units
°C/W
1 / 10
www.freescale.net.cn
datasheet pdf - http://www.DataSheet4U.net/
1 Page IRL2203NS/L
1000
100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10 2.7V
1000
100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
2.7V
10
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
20µs PULSE WIDTH
TJ= 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
http://www.DataSheet4U.net/
1000
100
TJ = 25°C
TJ = 175°C
10
2.0
V DS= 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.5 ID = 100A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3 / 10
www.freescale.net.cn
datasheet pdf - http://www.DataSheet4U.net/
3Pages IRL2203NS/L
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
600
ID
TOP
24A
500 42A
BOTTOM 60A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
http://www.DataSheet4U.net/
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 / 10
www.freescale.net.cn
datasheet pdf - http://www.DataSheet4U.net/
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRL2203NS データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRL2203N | Power MOSFET ( Transistor ) | International Rectifier |
IRL2203NL | Power MOSFET ( Transistor ) | International Rectifier |
IRL2203NL | Power MOSFET ( Transistor ) | FreesCale |
IRL2203NLPbF | Power MOSFET ( Transistor ) | International Rectifier |