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IRL2203NS の電気的特性と機能

IRL2203NSのメーカーはFreesCaleです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL2203NS
部品説明 Power MOSFET ( Transistor )
メーカ FreesCale
ロゴ FreesCale ロゴ 




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IRL2203NS Datasheet, IRL2203NS PDF,ピン配置, 機能
IRL2203NS/L
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l 100% RG Tested
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 7.0m
ID = 116A‡
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.http://www.DataSheet4U.net/
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
VGS
IAR
EAR
dv/dt
Linear Derating Factor
ÙGate-to-Source Voltage
Avalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMax
116
82
400
3.8
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RθJC
RθJA
k Parameter
Junction-to-Case
jkJunction-to-Ambient (PCB mount, steady state)
Typ
–––
–––
Max
0.85
40
Units
°C/W
1 / 10
www.freescale.net.cn
datasheet pdf - http://www.DataSheet4U.net/

1 Page





IRL2203NS pdf, ピン配列
IRL2203NS/L
1000
100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10 2.7V
1000
100
VGS
TOP 15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
2.7V
10
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
20µs PULSE WIDTH
TJ= 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
http://www.DataSheet4U.net/
1000
100
TJ = 25°C
TJ = 175°C
10
2.0
V DS= 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.5 ID = 100A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3 / 10
www.freescale.net.cn
datasheet pdf - http://www.DataSheet4U.net/


3Pages


IRL2203NS 電子部品, 半導体
IRL2203NS/L
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
600
ID
TOP
24A
500 42A
BOTTOM 60A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
http://www.DataSheet4U.net/
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 / 10
www.freescale.net.cn
datasheet pdf - http://www.DataSheet4U.net/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRL2203N

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRL2203NL

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRL2203NL

Power MOSFET ( Transistor )

FreesCale
FreesCale
IRL2203NLPbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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