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FJ330301のメーカーはPanasonicです、この部品の機能は「Silicon P-channel MOS FET」です。 |
部品番号 | FJ330301 |
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部品説明 | Silicon P-channel MOS FET | ||
メーカ | Panasonic | ||
ロゴ | |||
このページの下部にプレビューとFJ330301ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
Silicon P-channel MOS FET
For switching circuits
Overview
FJ330301 is P-channel small signal MOS FET employed small size surface
mounting package.
Features
Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V)
High-speed switching
Small size surface mounting package: SSSMini3-F2-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
Gate-source surrender voltage
VGSS
Drain current
ID
Peak drain current
IDP
Power dissipation
PD
Channel temperature
Tch
Storage temperature
Tstg
Rating Unit
-30 V
±12 V
-100
-200
mA
http://www.DataSheet4U.net/
mA
100 mW
150 °C
–55 to +150 °C
Package
Code
SSSMini3-F2-B
Pin Name
1: Gate
2: Source
3: Drain
Marking Symbol: U1
Internal Connection
(D)
3
12
(G) (S)
Publication date: January 2011
Ver. CED
1
datasheet pdf - http://www.DataSheet4U.net/
1 Page This product complies with the RoHS Directive (EU 2002/95/EC).
−100
FJ330301_ ID-VDS
ID VDS
Ta = 25°C
−80
VGS = −4.5 V
−2.5 V
−60
FJ330301_ ID-VGS
ID VGS
−102
VDS = −3 V
−10
Ta = 85°C
−1
103
102
FJ330301
FJ330301_ RDS(on)-VGS
RDS(on) VGS
Ta = 25°C
ID = 0.01 A
−40
−20
−1.5 V
0
0 − 0.1 − 0.2 − 0.3 − 0.4 − 0.5
Drain-source voltage VDS (V)
FJ330301_ RDS(on)-ID
RDS(on) ID
102
Ta = 25°C
10
VGS = −2.5 V
−4.0 V
1
−10−1
−10−2
25°C
−30°C
−10−3
0
− 0.5 −1.0 −1.5 −2.0
Gate-source voltage VGS (V)
FJ330301_
PD
PTDa -Ta
120
100
80
60
40
10
1
0 −2 −4 −6 −8 −10
Gate-source voltage VGS (V)
Area of safe operation for the FJ330301
Safe operation area
−103
TGala=ss25ep°Coxy board
(25.4 mm× 25.4 mm × t0.8 mm) coated with
copper foil, which has more than 300 mm2.
IDP = − 0.2 A
Limited by
−102
RDS(on) = 7 Ω (max)
(VGS = −4.0 V)
10 ms
1s
100 ms
DC
−10
20
http://www.DataSheet4U.net/
10−1
−10−1
−1 −10
Drain current ID (mA)
−102
FJ330301_Ciss , Crss , Coss -VDS
Ciss , Crss , Coss VDS
25
Ta = 25°C
20
15
Ciss
10
Coss
5
Crss
0
0 −5 −10 −15 −20
Drain-source voltage VDS (V)
0
0 40 80 120 160
Ambient temperature Ta (°C)
FJ330301_|Yfs|-ID
Yfs ID
1
Ta = 25°C
VDS = −3 V
10−1
10−2
10−−310−1
−1 −10
Drain current ID (mA)
−102
−−110−2 −10−1
−1
−10 −102
Drain-source voltage VDS (V)
Ver. CED
3
datasheet pdf - http://www.DataSheet4U.net/
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ FJ330301 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FJ330301 | Silicon P-channel MOS FET | Panasonic |