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ST2341AのメーカーはStansonです、この部品の機能は「P-Channel Enhancement Mode MOSFET」です。 |
部品番号 | ST2341A |
| |
部品説明 | P-Channel Enhancement Mode MOSFET | ||
メーカ | Stanson | ||
ロゴ | |||
このページの下部にプレビューとST2341Aダウンロード(pdfファイル)リンクがあります。 Total 6 pages
ST2341A
P Channel Enhancement Mode MOSFET
-6.0A
DESCRIPTION
ST2341A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
GS
12
FEATURE
-30V/-6.0A, RDS(ON) = 20m-ohm (Typ.)
@VGS = -10V
-30V/-3.8A, RDS(ON) = 28m-ohm
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
1.Gate 2.Source 3.Drain
http://www.DataSheet4U.net/
PART MARKING
SOT-23-3L
3
41YA
12
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341A 2010. Rev.1
datasheet pdf - http://www.DataSheet4U.net/
1 Page ST2341A
P Channel Enhancement Mode MOSFET
-6.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=-250uA -30
V
VGS(th) VDS=VGS,ID=-250uA -1.0
-3.0 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS=0V,VGS=±20V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VGS=-10,ID=-6.0A
VGS=-4.5V,ID=-3.8A
VDS=-5V,ID=-4Vhttp://www.DataSheet4U.net/
±100 nA
-1
-10 uA
-6 A
0.025 0.030
0.035 0.042
3.0 S
VSD IS=-1A,VGS=0V
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V
VGS=-4.5V
ID≡-3.3A
VDS=-6.0V
VGS=0V
F=1MHz
VDD=-6V
RL=6Ω
ID=-1.0A
VGEN=-4.5V
RG=6Ω
8.0 13
1.2 nC
2.2
700
160
pF
120
15 25
35 55
nS
60 90
40 40
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341A 2010. Rev.1
datasheet pdf - http://www.DataSheet4U.net/
3Pages SOT-23-3L PACKAGE OUTLINE
ST2341A
P Channel Enhancement Mode MOSFET
-6.0A
http://www.DataSheet4U.net/
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341A 2010. Rev.1
datasheet pdf - http://www.DataSheet4U.net/
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ ST2341A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ST2341 | P-Channel Enhancement Mode MOSFET | Stanson |
ST2341A | P-Channel Enhancement Mode MOSFET | Stanson |