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7N90 の電気的特性と機能

7N90のメーカーはUnisonic Technologiesです、この部品の機能は「900V N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 7N90
部品説明 900V N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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7N90 Datasheet, 7N90 PDF,ピン配置, 機能
7N90
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
7A, 900V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 7N90 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 7N90 is universally applied in active power factor
correction, electronic lamp ballast based on half bridge topology and
high efficient switched mode power supply.
„ FEATURES
* High switching speed
* RDS(ON)=1.8@ VGS=10V
* Typically 40nC low gate charge
* 100% avalanche tested
* Typically 17pF low CRSS
* Improved dv/dt capability
„ SYMBOL
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„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N90L-TF1-T
7N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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7N90 pdf, ピン配列
7N90
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS VDS=0V ,VGS=30V
IGSS VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3.5A
VDS=50V, ID=3.5A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=720V, VGS=10V,
ID=7.0A (Note 4,5)
VDD=450V, ID=7.0A,
RG=25(Note 4.,5)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
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Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =7.0A, VGS=0V
Body Diode Reverse Recovery Time
trr VGS=0V, IS=7.0A,
Body Diode Reverse Recovery Charge
QRR dIF/dt=100A/μs (Note 4)
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN
900
3.0
TYP
0.96
1.5
5.7
1440
140
17
40
8.5
20
35
80
95
55
400
4.3
MAX UNIT
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
1.8
S
1880
185
23
pF
pF
pF
52 nC
nC
nC
80 ns
170 ns
200 ns
120 ns
6.4 A
25.6 A
1.4 V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3Pages


7N90 電子部品, 半導体
7N90
Preliminary
Power MOSFET
http://www.DataSheet4U.net/
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

Link :


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7N90

N-Channel MOSFET Transistor

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7N90

900V N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
7N90-MK6

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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