(PDF) MJ1000 Datasheet - (MJ1000 / MJ1001) Complementary Power Darlingtons

Número de pieza	MJ1000
Descripción	(MJ1000 / MJ1001) Complementary Power Darlingtons
Fabricantes	Comset Semiconductors
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No Preview Available ! NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO VCEO VEBO IC IB PT TJ TS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IB=0 http://www.DataSheet4U.net/ IC(RMS) @ TC < 25° Derate above 25°C Value MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 60 80 60 80 5.0 8.0 0.1 90 0.515 -65 to +200 Unit V V V A A W W/°C °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-C Thermal Resistance, Junction to Case Value 1.94 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1\|3 datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF MJ1000 Data sheet ( Hoja de datos )