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Número de pieza | BUZ73A | |
Descripción | N-Channel Enhancement Mode Power MOS Transistors | |
Fabricantes | Comset Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ73A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! SEMICONDUCTORS
BUZ73A
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
This is an N-channel enhancement mode silicon gate
power field effect transistor designed for applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power.
This type can be operated directly from integrated circuits
and housed in a TO-220 envelope.
ABSOLUTE MAXIMUM RATINGS
http://www.DataSheet4U.net/
Symbol
Ratings
VDS
VSD
IDS
IDM
VGS
RDS(on)
PT
tJ
tstg
tL
Drain-Source Voltage
Drain-Source diode Voltage
Continuous Drain Current TC= 37°C
Pulsed Drain Current TC= 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
Storage Temperature range
Lead Temperature 1.6 mm from case for 10 seconde
Value
200
<1.7
5.5
22
20
0.6
40
-55 to +150
-55 to +150
300
Unit
V
V
A
A
V
Ω
Watts
°C
01/10/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet BUZ73A.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ73 | SIPMOS Power Transistor | Siemens Semiconductor Group |
BUZ73 | SIPMOS Power Transistor | Infineon Technologies AG |
BUZ73A | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ73A | 5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
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