DataSheet.jp


Datasheet 2N6282 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N6282
部品説明 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 
プレビュー
Total 6 pages
		
11

No Preview Available !

2N6282 Datasheet, 2N6282 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMonolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ,Tstg
2N6282 2N6283 2N6284
2N6285 2N6286 2N6287
60 80 100
60 80 100
5.0
20
40
0.5
160
0.915
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
RθJC
Max Unit
1.09 _C/W
* Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by 2N6282/D
2NN6PN282
thru
2N6284*
PNP
2N6285
thru
2N6287*
*Motorola Preferred Device
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
1

1 Page



2N6282 pdf, ピン配列
2N6282 thru 2N6284 2N6285 thru 2N6287
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
RθJC(t) = r(t) RθJC
RθJC = 1.09°C/W MAX
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
100 200 300 500 1000
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
20
0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0
1.0 TJ = 200°C
0.5
dc
0.1 ms
50
0.1 ms
20 0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0 dc
1.0 TJ = 200°C
0.5
50
0.1 ms
20 0.5 ms
10
1.0 ms
5.0
5.0 ms
2.0 dc
1.0 TJ = 200°C
0.5
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
5.0 10 20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6282, 2N6285
Figure 6. 2N6283, 2N6286
Figure 7. 2N6284, 2N6287
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
10,000
5000
2000
1000
500
200
100
50
20
10
1.0
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
2N6282/84 (NPN)
2N6285/87 (PNP)
2.0 5.0 10
20 50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 8. Small–Signal Current Gain
1000
TJ = 25°C
700
500
300
200
100
0.1 0.2
Cib
Cob
2N6282/84 (NPN)
2N6285/87 (PNP)
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3


3Pages


2N6282 電子部品, 半導体
2N6282 thru 2N6284 2N6285 thru 2N6287
PACKAGE DIMENSIONS
E
V
H
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B ––– 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N ––– 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
––– 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
––– 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
Motorola Bipolar Power Transistor Device Data
*2N6282/2ND628*2/D

6 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ 2N6282.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
2N628

There is a function of Trans GP BJT NPN 30V 7A 3-Pin(3+Tab) TO-220 Box.

New Jersey Semiconductor
New Jersey Semiconductor
2N6282

There is a function of POWER TRANSISTORS(20A/160W).

Mospec Semiconductor
Mospec Semiconductor
2N6282

There is a function of DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS.

ON Semiconductor
ON Semiconductor
2N6282

There is a function of DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS.

Boca Semiconductor Corporation
Boca Semiconductor Corporation

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap