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IRFS7440PBF の電気的特性と機能

IRFS7440PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFS7440PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFS7440PBF Datasheet, IRFS7440PBF PDF,ピン配置, 機能
StrongIRFET™
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
IRFS7440PbF
IRFSL7440PbF
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
2.0m
cG max. 2.5m
ID 208A
S
ID (Package Limited)
120A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
DD
S
G
D2Pak
IRFS7440PbF
S
D
G
TO-262
IRFSL7440PbF
www.DataSheet.net/
G
Gate
D
D ra in
S
Source
Ordering Information
Base Part Number
IRFS7440PbF
IRFS7440PbF
IRFSL7440PbF
Package Type
D2-Pak
D2-Pak
TO-262
Standard Pack
Form
Tube
Tape and Reel Left
Tube
Quantity
50
800
50
Complete Part Number
IRFS7440PbF
IRFS7440TRLPbF
IRFSL7440PbF
7.0
ID = 100A
6.0
5.0
4.0 TJ = 125°C
3.0
2.0
TJ = 25°C
1.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com
240
200 Limited By Package
160
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
1
October 10, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 Page





IRFS7440PBF pdf, ピン配列
IRFS/SL7440PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs Forward Transconductance
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD
dv/dt
fDiode Forward Voltage
Peak Diode Recovery
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Min.
88
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
90
23
32
58
24
68
115
68
4730
680
460
845
980
Max.
–––
135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
S VDS = 10V, ID = 100A
nC ID = 100A
gVDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
ns VDD = 20V
ID = 30A
gRG = 2.7
VGS = 10V
pF VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
iVGS = 0V, VDS = 0V to 32V
hVGS = 0V, VDS = 0V to 32V
Min.
–––
–––
–––
–––
–––
–––
– ––www.DataSheet.net/
–––
–––
Typ.
–––
–––
0.9
6.8
24
28
17
20
1.3
Max.
193
772
1.3
–––
–––
–––
–––
–––
–––
Units
Conditions
A MOSFET symbol
D
showing the
A integral reverse
G
V
V/ns
ns
nC
A
gp-n junction diode.
TJ = 25°C, IS = 100A, VGS = 0V
S
TJ = 175°C, IS = 100A, VDS = 40V
TJ = 25°C
VR = 34V,
TJ = 125°C
TJ = 25°C
gIF = 100A
di/dt = 100A/μs
TJ = 125°C
TJ = 25°C
www.irf.com
3
October 10, 2012 Datasheetpdf-http://www.DataSheet4U.co.kr/


3Pages


IRFS7440PBF 電子部品, 半導体
IRFS/SL7440PbF
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
www.DataSheet.net/
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
250
TOP
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
200
BOTTOM 1.0% Duty Cycle
ID = 100A
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
150 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
100
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
50 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
October 10, 2012
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
www.irf.com
Datasheet pdf - http://www.DataSheet4U.co.kr/

6 Page



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部品番号部品説明メーカ
IRFS7440PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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