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IRFS740AのメーカーはFairchild Semiconductorです、この部品の機能は「Advanced Power MOSFET」です。 |
部品番号 | IRFS740A |
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部品説明 | Advanced Power MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとIRFS740Aダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 400V
Lower RDS(ON) : 0.437 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy www.DataSheet.net/
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
IRFS740A
BVDSS = 400 V
RDS(on) = 0.55 Ω
ID = 5.7 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
400
5.7
3.6
40
+_ 30
557
5.7
4.4
4.0
44
0.35
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ oC
oC
Thermal Resistance
Symbol
R θJC
R θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.86
62.5
Units
oC/ W
©1999 Fairchild Semiconductor Corporation
Rev. B
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 Page N-CHANNEL
POWER MOSFET
IRFS740A
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
101
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
1.2
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. V = 0 V
GS
2. VDS = 50 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
0.9 101
VGS = 10 V
0.6
0.3
0.0
0
VGS = 20 V
100
www.DataSheet.net/
@ Note : TJ = 25 oC
10 20 30
ID , Drain Current [A]
40
10-1
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Fig 5. Capacitance vs. Drain-Source Voltage
2000
1500 C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1000
C oss
500
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 80 V
10
VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 10.0 A
0
0 10 20 30 40 50 60
QG , Total Gate Charge [nC]
Datasheetpdf-http://www.DataSheet4U.co.kr/
3Pages IRFS740A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG”
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
Gate Pulse Width
D = --------------------------
Gate Pulse Periodwww.DataSheet.net/
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRFS740A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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IRFS740A | Advanced Power MOSFET | Fairchild Semiconductor |