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CGH40120F の電気的特性と機能

CGH40120FのメーカーはCREEです、この部品の機能は「RF Power GaN HEMT」です。


製品の詳細 ( Datasheet PDF )

部品番号 CGH40120F
部品説明 RF Power GaN HEMT
メーカ CREE
ロゴ CREE ロゴ 




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CGH40120F Datasheet, CGH40120F PDF,ピン配置, 機能
CGH40120F
120 W, RF Power GaN HEMT
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40120F, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40120F ideal for linear and compressed amplifier circuits.
The transistor is available in a flange package.
PackagePNTy: pCeGs:H4404102109F3
FEATURES
APPLICATIONS
Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
120 W Typical PSAT
• 70 % Efficiency at PSAT
28 V Operation
2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentationwww.DataSheet.net/
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 Page





CGH40120F pdf, ピン配列
Typical Performance
Gain and Input Return Loss vs Frequency of the CGH40120F measured in
Broadband Amplifier Circuit CGH40120F-TB
VDD = 28 V, IDQ = 1.0 A
25
CGH40120F S21
25
CGH40120F S11
20 15
15 5
10 -5
5 -15
0
800
900
1000
1100
1200 1300 1400
Frequency (MHz)
www.DataSheet.net/
1500
1600
1700
-25
1800
Gain, Output Power and PAE vs Frequency of the CGH40120F measured in
Broadband Amplifier Circuit CGH40120F-TB
VDD = 28 V, IDQ = 1.0 A
30 150
Output Power
25 125
Gain
20 100
15 75
PAE
10 50
5
Gain
Output Power
PAE
25
0
1200
1250
1300
Frequency (MHz)
1350
0
1400
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
3 CGH40120F Rev 2.5
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.co.kr/


3Pages


CGH40120F 電子部品, 半導体
Typical Performance
Simulated Maximum Available GCaGiHn40a1n20dF K Factor of the CGH40120F
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120F
VDD = 28 V, IDQ = 1 A
www.DataSheet.net/
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A > 250 V
1 < 200 V
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
6 CGH40120F Rev 2.5
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.co.kr/

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
CGH40120F

RF Power GaN HEMT

CREE
CREE


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