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CGH40120FのメーカーはCREEです、この部品の機能は「RF Power GaN HEMT」です。 |
部品番号 | CGH40120F |
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部品説明 | RF Power GaN HEMT | ||
メーカ | CREE | ||
ロゴ | |||
このページの下部にプレビューとCGH40120Fダウンロード(pdfファイル)リンクがあります。 Total 13 pages
CGH40120F
120 W, RF Power GaN HEMT
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40120F, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40120F ideal for linear and compressed amplifier circuits.
The transistor is available in a flange package.
PackagePNTy: pCeGs:H4404102109F3
FEATURES
APPLICATIONS
• Up to 2.5 GHz Operation
• 20 dB Small Signal Gain at 1.0 GHz
• 15 dB Small Signal Gain at 2.0 GHz
• 120 W Typical PSAT
• 70 % Efficiency at PSAT
• 28 V Operation
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentationwww.DataSheet.net/
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 Page Typical Performance
Gain and Input Return Loss vs Frequency of the CGH40120F measured in
Broadband Amplifier Circuit CGH40120F-TB
VDD = 28 V, IDQ = 1.0 A
25
CGH40120F S21
25
CGH40120F S11
20 15
15 5
10 -5
5 -15
0
800
900
1000
1100
1200 1300 1400
Frequency (MHz)
www.DataSheet.net/
1500
1600
1700
-25
1800
Gain, Output Power and PAE vs Frequency of the CGH40120F measured in
Broadband Amplifier Circuit CGH40120F-TB
VDD = 28 V, IDQ = 1.0 A
30 150
Output Power
25 125
Gain
20 100
15 75
PAE
10 50
5
Gain
Output Power
PAE
25
0
1200
1250
1300
Frequency (MHz)
1350
0
1400
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
3 CGH40120F Rev 2.5
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.co.kr/
3Pages Typical Performance
Simulated Maximum Available GCaGiHn40a1n20dF K Factor of the CGH40120F
VDD = 28 V, IDQ = 1.0 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120F
VDD = 28 V, IDQ = 1 A
www.DataSheet.net/
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A > 250 V
1 < 200 V
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
6 CGH40120F Rev 2.5
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | |||
ページ | 合計 : 13 ページ | ||
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PDF ダウンロード | [ CGH40120F データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
CGH40120F | RF Power GaN HEMT | CREE |