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Datasheet 2N6043 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12N6043COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, de
Central Semiconductor
Central Semiconductor		transistor
22N6043COMPLEMENTARY SILICON POWER TRANSISTORS

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC
ON Semiconductor
ON Semiconductor		transistor
32N6043POWER TRANSISTORS(10A/80W)

A A A A
Mospec Semiconductor
Mospec Semiconductor		transistor
42N6043DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Boca Semiconductor Corporation
Boca Semiconductor Corporation		transistor
52N6043COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc •
Motorola Semiconductors
Motorola Semiconductors		transistor


2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12N60N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact
Unisonic Technologies
Unisonic Technologies		mosfet
22N60-EN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Unisonic Technologies
Unisonic Technologies		mosfet
32N6008Series 2N Transistors

Sprague
Sprague		transistor
42N6009Series 2N Transistors

Sprague
Sprague		transistor
52N6010Silicon Transistors

Semiconductor
Semiconductor		transistor
62N6027SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS

2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte
Central Semiconductor
Central Semiconductor		transistor
72N6027Programmable Unijunction Transistor

2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge
ON Semiconductor
ON Semiconductor		transistor



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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