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UTT50P06 の電気的特性と機能

UTT50P06のメーカーはUnisonic Technologiesです、この部品の機能は「P-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UTT50P06
部品説明 P-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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UTT50P06 Datasheet, UTT50P06 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
UTT50P06
Preliminary
-50A, -60V P-CHANNEL (D-S)
POWER MOSFET
„ DESCRIPTION
The UTC UTT50P06 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance, and it can also withstand
high energy in the avalanche.
This UTC UTT50P06 is suitable for load switch,etc.
„ FEATURES
* VDS = -60V
* ID = -50A
* RDS(ON)=0.012@ VGS=-10V, ID=-17A
* High Switching Speed
„ SYMBOL
3.Source
www.DataSheet.net/
1.Gate
Power MOSFET
2.Drain
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT50P06L-TA3-T
UTT50P06G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-596.a
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 Page





UTT50P06 pdf, ピン配列
UTT50P06
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
VGS(TH)
IDSS
IGSS
VGS=0V, ID=-250µA
VDS=VGS, ID=-250µA
VDS=-60V, VGS=0V
VDS=-60V, VGS=0V, TJ=125°C
VDS=-60V, VGS=0V, TJ=150°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
VGS=-10V, ID=-17A
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=-10V, ID=-50A, TJ=125°C
VGS=-10V, ID=-50A, TJ=150°C
VGS=-4.5V, ID=-14A
Forward Transconductance (Note 1)
gFS VDS=-15V, ID=-17A
On State Drain Current (Note 1)
ID(ON) VGS=-10V, VDS=-5V
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=-25V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 2, 3)
Total Gate Charge
QG
Gate to Source Charge
QGS VGS=-10V, VDS=-30V, ID=-50A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
V =-30V, R =0.6, I -50A,DDwww.DataSheet.net/
L
D
VGEN=-10V, RG=6
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1) VSD IF=-50A, VGS=0V
Body Diode Reverse Recovery Time
tRR IF=-50A, dI/dt=100A/µs
Notes: 1. Pulse test; pulse width300µs, duty cycle2%.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.
MIN
-60
-1
-50
TYP
0.012
61
4950
480
405
110
19
28
15
70
175
175
-1.0
45
MAX UNIT
-3
-1
-50
-100
+100
-100
V
V
µA
nA
nA
0.015
0.025
0.028
0.020
S
A
pF
pF
pF
165 nC
nC
nC
23 ns
105 ns
260 ns
260 ns
-50 A
-80 A
-1.6 V
70 ns
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-596.a
Datasheet pdf - http://www.DataSheet4U.co.kr/


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共有リンク

Link :


部品番号部品説明メーカ
UTT50P04

P-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
UTT50P06

P-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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