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UTT30P04 の電気的特性と機能

UTT30P04のメーカーはUnisonic Technologiesです、この部品の機能は「P-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UTT30P04
部品説明 P-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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UTT30P04 Datasheet, UTT30P04 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
UTT30P04
Preliminary
40A, 21V P-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC UTT30P04 is a P-channel power MOSFET providing
customers with fast switching, ruggedized device design, low
on-resistance and cost-effectiveness by UTC’s advanced
technology.
„ FEATURES
* Low on-Resistance
* Fast Switching Speed
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT30P04L-TN3-R
UTT30P04G-TN3-R
Note: G:Gate, D:Drain, S:Source
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Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-613.a
Datasheet pdf - http://www.DataSheet4U.co.kr/

1 Page





UTT30P04 pdf, ピン配列
UTT30P04
Preliminary
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
On-State Drain Current (Note 1)
BVDSS
IDSS
IGSS
ID(ON)
ID=-250µA, VGS=0V
VDS=-32V, VGS=0V
VDS=-30V, VGS=0V, TJ=125°C
VDS=0V, VGS=±20V
VDS=-5V, VGS=-10V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State
Resistance (Note 1)
Forward Transconductance (Note 1)
Gate Resistance
VGS(TH)
RDS(ON)
gFS
RG
VDS=VGS, ID=-250µA
VGS=-5V, ID=-8A
VGS=-7V, ID=-8A
VGS=-10V, ID=-10A
VDS=-10V, ID=-10A
VGS=0V, VDS=0V, f=1.0MHz
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
CISS
COSS
CRSS
VGS=0V, VDS=-20V, f=1.0MHz
QG (VGS=-10V)
QG (VGS=-4.5V)
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=0.5V(BR)DSS, ID=-18A
VGS=-10V, VDS=-20V, ID-10A,
RGS=6, RL=2
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SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Drain-Source Diode Forward Voltage 1 VSD IF=-10A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
IF=-10A, dIF/dt=100A/µs
Note: 1. Pulsde test: Pulse width 300µsec, duty cycle 2%.
2. Independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
-40 V
1
10
µA
±250 nA
-70 A
-1 -2.5 -3 V
65 73
35 50 m
30 40
20 S
4.95
1090
175
91
pF
17
8.5 nC
5.5
3
6 ns
16 ns
26 ns
10 ns
-21
-1.2
15.5
7.9
A
V
ns
nC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-613.a
Datasheet pdf - http://www.DataSheet4U.co.kr/


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共有リンク

Link :


部品番号部品説明メーカ
UTT30P04

P-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
UTT30P06

P-CHANNEL POWER MOSFET

Unisonic Technologies
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