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UTT36N05 の電気的特性と機能

UTT36N05のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UTT36N05
部品説明 N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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UTT36N05 Datasheet, UTT36N05 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
UTT36N05
Preliminary
36A, 50V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET TRANSISTOR
„ DESCRIPTION
The UTC UTT36N05 is an N-channel enhancement power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON), high switching speed, high current
capacity and low gate charge.
The UTC UTT36N05 is suitable for motor control, AC-DC or
DC-DC converters and audio amplifiers, etc.
„ FEATURES
* RDS(ON)=33m@ VGS=5V,ID=18A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 35nC)
„ SYMBOL
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Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT36N05L-TA3-T
UTT36N05G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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UTT36N05 pdf, ピン配列
UTT36N05
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
On State Drain Current
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=Max Rating, VGS=0V
VDS= Max ×0.8,TC=125°C,VGS=0V
VGS=+15V, VDS=0V
VGS=-15V, VDS=0V
50
1
10
+100
-100
V
µA
nA
nA
VGS(TH)
RDS(ON)
ID(ON)
VDS=VGS, ID=250µA
VGS=5V, ID=18A
VDS>ID(ON)×RDS(ON)max, VGS=10V
1 1.6 2.5
0.033 0.04
36
V
A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
1350 1800 pF
450 600 pF
130 200 pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
OFF-Voltage Rise Time
Fall-Time
Cross-Over Time
QG
QGS
QGD
tD(ON)
tR
tR(VOFF)
tF
tC
VGS=5V, VDS=40V, ID=36A
VDD=25V, ID=18A, RG=50, VGS=5V
VDD=40V, ID=36A, RG=50, VGS=5V
35 50 nC
11 nC
19 nC
90 130 ns
550 800 ns
110 160 ns
180 260 ns
310 450 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
ISM
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(Note 2)
Drain-Source Diode Forward Voltage
VSD ISD=36A, VGS=0V (Note 1)
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
tRR
QRR
IRRM
ISD=36A, VDD=30V, di/dt=100A/µs,
TJ = 150°C
Notes: 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
2. Pulse width limited by safe operating area
36
144
1.6
100
0.27
5.5
A
A
V
ns
µC
A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3Pages


UTT36N05 電子部品, 半導体
UTT36N05
Preliminary
Power MOSFET
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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部品番号部品説明メーカ
UTT36N05

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies


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