DataSheet.jp


Datasheet 2N6040 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N6040
部品説明 COMPLEMENTARY SILICON POWER TRANSISTORS
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 
プレビュー
Total 6 pages
		
11

No Preview Available !

2N6040 Datasheet, 2N6040 PDF,ピン配置, 機能
PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium−power complementary silicon transistors are
designed for general−purpose amplifier and low−speed switching
applications.
Features
High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc −
VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N6040 VCEO 60 Vdc
2N6043
2N6042
2N6045
100
Collector−Base Voltage
2N6040
2N6043
2N6042
2N6045
VCB
60 Vdc
100
Emitter−Base Voltage
Collector Current
Continuous
Peak
VEB
IC
5.0 Vdc
8.0 Adc
16
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB 120 mAdc
PD 75 W
0.60 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 − 100 VOLTS, 75 WATTS
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
2N604xG
AYWW
2N604x = Device Code
x = 0, 2, 3, or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
Publication Order Number:
2N6040/D

1 Page



2N6040 pdf, ピン配列
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
TA TC
4.0 80
3.0 60
2.0 40
1.0 20
TC
TA
00
0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
VCC
- 30 V
 1N5825 USED ABOVE IB 100 mA
 MSD6100 USED BELOW IB 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ 8.0 V
0
51 D1
8.0 k  120
V1
approx
-12 V
25 ms
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
Figure 2. Switching Times Equivalent Circuit
5.0
3.0 ts
2.0
1.0 tf
0.7
0.5
0.3
0.2
VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
0.07 PNP
0.05 NPN
0.1 0.2 0.3
td @ VBE(off) = 0 V
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
tr
5.0 7.0 10
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03 0.01
SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
qJC(t) = r(t) qJC
qJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10 20 30
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
50
100 200 300 500 1000
http://onsemi.com
3


3Pages


2N6040 電子部品, 半導体
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
BF
Q
H
Z
4
1 23
A
K
L
V
G
N
D
−T−
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.415
C 0.160 0.190
D 0.025 0.038
F 0.142 0.161
G 0.095 0.105
H 0.110 0.161
J 0.014 0.024
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.53
4.07 4.83
0.64 0.96
3.61 4.09
2.42 2.66
2.80 4.10
0.36 0.61
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
6
2N6040/D

6 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ 2N6040.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
2N6040

There is a function of POWER TRANSISTORS(10A/80W).

Mospec Semiconductor
Mospec Semiconductor
2N6040

There is a function of COMPLEMENTARY SILICON POWER TRANSISTORS.

ON Semiconductor
ON Semiconductor
2N6040

There is a function of DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS.

Boca Semiconductor Corporation
Boca Semiconductor Corporation
2N6040

There is a function of (2N6040 - 2N6045) COMPLEMENTARY SILICON POWER TRANSISTORS.

Motorola
Motorola

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap