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4N65K の電気的特性と機能

4N65KのメーカーはUnisonic Technologiesです、この部品の機能は「650 Volts N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 4N65K
部品説明 650 Volts N-CHANNEL POWER MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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4N65K Datasheet, 4N65K PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
4N65K
4A, 650V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 4N65K is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„ FEATURES
* RDS(ON) = 2.5@VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
Power MOSFET
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„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65KL-TF3-T
4N65KG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-840.A
Datasheet pdf - http://www.DataSheet4U.co.kr/

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4N65K pdf, ピン配列
4N65K
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
BVDSS
IDSS
IGSS
BVDSS/TJ
VGS = 0 V, ID = 250μA
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
650
V
10 μA
100 nA
-100 nA
0.6 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 2.2A
2.0 4.0
2.4 2.5
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
520 670
70 90
8 11
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 325V, ID = 4.0A,
RG = 25(Note 1, 2)
VDS= 520V,ID= 4.0A,
VGS= 10V (Note 1, 2)
13 35
70 100
25 60
100 120
15 20
3.4
7.1
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 4.4A
Maximum Continuous Drain-Source Diode
Forward Current
IS
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1.4 V
4.4 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6 A
Reverse Recovery Time
trr VGS = 0V, IS = 4.4A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Note: 1. Pulse Test: Pulse width300μs, Duty cycle2%
2. Essentially independent of operating temperature
250 ns
1.5 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-840.A
Datasheet pdf - http://www.DataSheet4U.co.kr/


3Pages


4N65K 電子部品, 半導体
4N65K
„ TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100
Note:
1. VGS=0V
2. ID=250µA
-50 0
50 100 150 200
Junction Temperature, TJ С)
On-State Characteristics
10
1
VGS
Top: 10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
5.0V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1 1
10
Drain-to-Source Voltage, VDS (V)
Power MOSFET
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note:
1. VGS=10V
2. ID=4A
-50 0 50 100 150
Junction Temperature, TJ С)
200
Transfer Characteristics
10
25°С
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1 150°С
0.1
2
Notes:
1. VDS=50V
2. 250µs Pulse Test
4 6 8 10
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-840.A
Datasheet pdf - http://www.DataSheet4U.co.kr/

6 Page



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