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4N65KのメーカーはUnisonic Technologiesです、この部品の機能は「650 Volts N-CHANNEL POWER MOSFET」です。 |
部品番号 | 4N65K |
| |
部品説明 | 650 Volts N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと4N65Kダウンロード(pdfファイル)リンクがあります。 Total 8 pages
UNISONIC TECHNOLOGIES CO., LTD
4N65K
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65K is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
www.DataSheet.net/
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65KL-TF3-T
4N65KG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-840.A
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 Page 4N65K
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
BVDSS
IDSS
IGSS
△BVDSS/△TJ
VGS = 0 V, ID = 250μA
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
650
V
10 μA
100 nA
-100 nA
0.6 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 2.2A
2.0 4.0
2.4 2.5
V
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
520 670
70 90
8 11
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
VDS= 520V,ID= 4.0A,
VGS= 10V (Note 1, 2)
13 35
70 100
25 60
100 120
15 20
3.4
7.1
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 4.4A
Maximum Continuous Drain-Source Diode
Forward Current
IS
www.DataSheet.net/
1.4 V
4.4 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6 A
Reverse Recovery Time
trr VGS = 0V, IS = 4.4A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
250 ns
1.5 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-840.A
Datasheet pdf - http://www.DataSheet4U.co.kr/
3Pages 4N65K
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100
Note:
1. VGS=0V
2. ID=250µA
-50 0
50 100 150 200
Junction Temperature, TJ (°С)
On-State Characteristics
10
1
VGS
Top: 10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
5.0V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1 1
10
Drain-to-Source Voltage, VDS (V)
Power MOSFET
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note:
1. VGS=10V
2. ID=4A
-50 0 50 100 150
Junction Temperature, TJ (°С)
200
Transfer Characteristics
10
25°С
www.DataSheet.net/
1 150°С
0.1
2
Notes:
1. VDS=50V
2. 250µs Pulse Test
4 6 8 10
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-840.A
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ 4N65K データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
4N65 | N-Channel MOSFET Transistor | Inchange Semiconductor |
4N65 | 650 Volts N-CHANNEL POWER MOSFET | Unisonic Technologies |
4N65-C | N-CHANNEL POWER MOSFET | Unisonic Technologies |
4N65-E | N-CHANNEL POWER MOSFET | Unisonic Technologies |