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4N65のメーカーはUnisonic Technologiesです、この部品の機能は「650 Volts N-CHANNEL POWER MOSFET」です。 |
部品番号 | 4N65 |
| |
部品説明 | 650 Volts N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと4N65ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
UNISONIC TECHNOLOGIES CO., LTD
4N65
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65 is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1
TO-220
1
TO-220F1
1
TO-252
1
www.DataSheet.net/
TO-263
Power MOSFET
1
TO-220F
1
TO-220F2
1
TO-251
1
TO-262
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65L-TA3-T
4N65G-TA3-T
4N65L- TF1-T
4N65G-TF1-T
4N65L- TF2-T
4N65G-TF2-T
4N65L- TF3-T
4N65G-TF3-T
4N65L-TM3-T
4N65G-TM3-T
4N65L-TN3-R
4N65G-TN3-R
4N65L-TN3-T
4N65G-TN3-T
4N65L-T2Q-T
4N65G-T2Q-T
4N65L-TQ2-R
4N65G-TQ2-R
4N65L-TQ2-T
4N65G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-252
TO-262
TO-263
TO-263
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-397.F
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 Page 4N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
10 μA
Gate-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
△BVDSS/△TJ ID=250μA, Referenced to 25°C
100 nA
-100 nA
0.6 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 2.2A
2.0 4.0 V
2.4 2.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
520 670
70 90
8 11
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS= 520V,ID= 4.0A,
VGS= 10V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 4.4A
Maximum Continuous Drain-Source Diode
Forward Current
IS
www.DataSheet.net/
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0V, IS = 4.4A,
QRR dIF/dt = 100 A/μs (Note 1)
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
13 35 ns
45 100 ns
25 60 ns
35 80 ns
15 20 nC
3.4 nC
7.1 nC
1.4 V
4.4 A
17.6 A
250 ns
1.5 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-397.F
Datasheet pdf - http://www.DataSheet4U.co.kr/
3Pages 4N65
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100
Note:
1. VGS=0V
2. ID=250µA
-50 0
50 100 150 200
Junction Temperature, TJ (°С)
On-State Characteristics
10
1
VGS
Top: 10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
5.0V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1 1
10
Drain-to-Source Voltage, VDS (V)
Power MOSFET
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note:
1. VGS=10V
2. ID=4A
-50 0 50 100 150
Junction Temperature, TJ (°С)
200
Transfer Characteristics
10
25°С
www.DataSheet.net/
1 150°С
0.1
2
Notes:
1. VDS=50V
2. 250µs Pulse Test
4 6 8 10
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-397.F
Datasheet pdf - http://www.DataSheet4U.co.kr/
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ 4N65 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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