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PDF PS21963-4C Data sheet ( Hoja de datos )
| Número de pieza | PS21963-4C | |
| Descripción | Dual-In-Line Package Intelligent Power Module | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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PS21963-4
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
INTEGRATED POWER FUNCTIONS
600V/10A low-loss 5th generation IGBT inverter bridge for
three phase DC-to-AC power conversion
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
• For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply).
• Input interface : 3V, 5V line (High Active).
• UL Approved : Yellow Card No. E80276
APPLICATION
AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES (PS21963-4)
0.28
1.778 ±0.2
17
38 ±0.5
20×1.778(=35.56)
35 ±0.3
A
16-0.5
1
www.DataSheet.net/
B
2-R1.6
QR Type name
Code Lot No.
3 MIN
18
0.28
2.54 ±0.2
0.5
14×2.54 (=35.56)
25
8-0.6
4-C1.2
0.5 0.5
0.5
2.5 MIN
(2.656)
3.5
1.5 ±0.05
0.8
HEAT SINK SIDE
Dimensions in mm
TERMINAL CODE
1. NC
2. VUFB
3. VVFB
4. VWFB
5. UP
6. VP
7. WP
8. VP1
9. VNC *
10. UN
11. VN
12. WN
13. VN1
14. FO
15. CIN
16. VNC *
17. NC
18. NC
19. NC
20. N
21. W
22. V
23. U
24. P
25. NC
1.5 MIN
HEAT SINK SIDE
(2.756)
(1.2)
DETAIL A
DETAIL B
*) Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
Aug. 2007
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT)
Self protection supply voltage limit
(short circuit protection capability)
TC Module case operation temperature
Tstg Storage temperature
Viso Isolation voltage
Condition
VD = 13.5~16.5V, Inverter part
Tj = 125°C, non-repetitive, less than 2µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
Vrms
Note 2: TC measurement point
Control terminals
DIP-IPM
11.6mm
3mm
IGBT chip position
FWD chip position
Power terminals
TC point
Heat sink side
THERMAL RESISTANCE
Symbol
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to case thermal
resistance
(Note 3)
Condition
www.DataSheet.net/
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Limits
Unit
Min. Typ. Max.
— — 3.7 °C/W
— — 4.5 °C/W
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM
and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Collector-emitter saturation
voltage
FWD forward voltage
Switching times
Collector-emitter cut-off
current
Condition
VD = VDB = 15V
IC = 10A, Tj = 25°C
VIN = 5V
IC = 10A, Tj = 125°C
Tj = 25°C, –IC = 10A, VIN = 0V
VCC = 300V, VD = VDB = 15V
IC = 10A, Tj = 125°C, VIN = 0 ↔ 5V
Inductive load (upper-lower arm)
VCE = VCES
Tj = 25°C
Tj = 125°C
Limits
Unit
Min. Typ. Max.
— 1.70 2.20
— 1.80 2.30 V
— 1.70 2.20 V
0.60 1.10 1.70 µs
— 0.30 — µs
—
0.40
0.60
µs
—
1.50
2.10
µs
—
0.50
0.80
µs
——
1 mA
— — 10
Aug. 2007
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PS21963-4C.PDF ] | |
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