PDF IXYH50N120C3D1 Data sheet ( Hoja de datos )

Número de pieza	IXYH50N120C3D1
Descripción	IGBT
Fabricantes	IXYS Corporation
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No Preview Available ! 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Advance Technical Information IXYH50N120C3D1 VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 50A 3.0V 57ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 105 A 50 A 25 A 230 A 40 A 750 mJ ICM = 100 ≤@VCE VCES 625 A W -55 ... +150www.DataSheet.net/ 150 -55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6g TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Anti-Parallel Ultra Fast Diode z Avalanche Rated z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA 500 μA ±100 nA 2.5 3.0 V 3.2 V Applications z High Frequency Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2011 IXYS CORPORATION, All Rights Reserved DS100388(09/11) Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 Eoff Eon - - - - 5 TJ = 125ºC , VGE = 15V VCE = 600V 4 I C = 80A 24 20 16 3 12 2 I C = 40A 8 14 00 5 10 15 20 25 30 RG - Ohms Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.5 4.0 Eoff Eon - - - - RG = 5Ω , VGE = 15V 3.5 VCE = 600V 3.0 I C = 80A 2.5 2.0 1.5 I C = 40A 1.0 0.5 25 50 75 TJ - Degrees Centigrade 100 16 14 12 10 8 6 4 2 0 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 180 360 160 t f i td(off) - - - - 340 RG = 5Ω , VGE = 15V 140 VCE = 600V 320 120 TJ = 125ºC 100 300 280 80 260 60 TJ = 25ºC 40 240 220 20 200 0 180 20 30 40 50 60 70 80 IC - Amperes IXYH50N120C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4 3.5 Eoff Eon - - - - RG = 5Ω , VGE = 15V 3 VCE = 600V 2.5 TJ = 125ºC 2 TJ = 25ºC 1.5 1 0.5 0 20 30 40 50 60 70 IC - Amperes 16 14 12 10 8 6 4 2 0 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 160 t f i td(off) - - - - 140 TJ = 125ºC, VGE = 15V VCE = 600V 120 800 700 600 100 www.DataSheet.net/ 80 60 I C = 40A I C = 80A 500 400 300 40 5 200 10 15 20 25 30 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 320 t f i td(on) - - - - 140 RG = 5Ω , VGE = 15V VCE = 600V 120 I C = 40A 300 280 100 260 80 240 I C = 80A 60 220 40 200 20 25 50 75 100 TJ - Degrees Centigrade 180 125 © 2011 IXYS CORPORATION, All Rights Reserved Datasheet pdf - http://www.DataSheet4U.co.kr/ 5 Page

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