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IRG7SC12FPBF PDF Data sheet ( 特性 )

部品番号 IRG7SC12FPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG7SC12FPBF Datasheet, IRG7SC12FPBF PDF,ピン配置, 機能
INSULATED GATE BIPOLAR TRANSISTOR
PD - 96363
IRG7SC12FPbF
Features
• Low VCE (ON) Trench IGBT Technology
• Maximum Junction temperature 150 °C
• 3 μS short circuit SOA
• Square RBSOA
• Positive VCE (ON) Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC = 8A, TC = 100°C
tSC 3μs, TJ(max) = 150°C
VCE(on) typ. = 1.60V
Benefits
• High Efficiency in a HVAC, Refrigerator applications
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
www.DataSheet.net/
G
Gate
C
E
G
D2Pak
IRG7SC12FPbF
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Pulse Collector Current
cClamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
eThermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
24
13
8
24
32
± 30
69
28
-55 to +150
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
Typ.
–––
0.50
40
Max.
1.8
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
03/25/11
Datasheet pdf - http://www.DataSheet4U.co.kr/

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