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2N5400 の電気的特性と機能

2N5400のメーカーはON Semiconductorです、この部品の機能は「Amplifier Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N5400
部品説明 Amplifier Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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2N5400 Datasheet, 2N5400 PDF,ピン配置, 機能
2N5400
Preferred Device
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
120
130
5.0
600
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
5400
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 2
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5400/D

1 Page





2N5400 pdf, ピン配列
200
150
100
70
50
30
20
0.1
TJ = 125°C
25°C
−55 °C
0.2 0.3
0.5
2N5400
1.0
2.0 3.0
5.0
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
10
VCE = − 1.0 V
VCE = − 5.0 V
20 30
50
1.0
0.9
0.8
0.7
0.6
0.5 IC = 1.0 mA
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05 0.1
0.2 0.5 1.0
IB, BASE CURRENT (mA)
2.0
5.0 10 20
Figure 2. Collector Saturation Region
103
102 VCE = 30 V
101
TJ = 125°C
100
75°C
10−1
REVERSE
10−2 25°C
IC = ICES
FORWARD
10−3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
100
50
http://onsemi.com
3


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